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RJH60M7DPQ-A0

Renesas
Part Number RJH60M7DPQ-A0
Manufacturer Renesas
Description IGBT
Published Jul 20, 2012
Detailed Description Preliminary Datasheet RJH60M7DPQ-A0 600 V - 50 A - IGBT Application: Inverter Features  Short circuit withstand time (...
Datasheet PDF File RJH60M7DPQ-A0 PDF File

RJH60M7DPQ-A0
RJH60M7DPQ-A0

Overview
Preliminary Datasheet RJH60M7DPQ-A0 600 V - 50 A - IGBT Application: Inverter Features  Short circuit withstand time (8 s typ.
)  Low collector to emitter saturation voltage VCE(sat) = 1.
6 V typ.
(at IC = 50 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (100 ns typ.
) in one package  Trench gate and thin wafer technology  High speed switching tf = 80 ns typ.
(at VCC = 300 V, VGE = 15 V, IC = 50 A, Rg = 5 , Ta = 25°C, inductive load) R07DS0538EJ0100 Rev.
1.
00 Sep 02, 2011 Outline RENESAS Package code: PRSS0003ZH-A (Package name: TO-247A) C 4 G 1.
Gate 2.
Collector 3.
Emitter 4.
Collector E 1 2 3 www.
DataSheet.
net/ Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage / diode reverse voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 100°C Collector peak current Collector to emitter diode forward current Collector to emitter diode forward peak current Collector dissipation Junction to case thermal resistance (IGBT) Junction to case the...


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