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RJH60D7DPQ-E0

Renesas
Part Number RJH60D7DPQ-E0
Manufacturer Renesas
Description IGBT
Published Jul 20, 2012
Detailed Description Preliminary Datasheet RJH60D7DPQ-E0 600V - 50A - IGBT Application: Inverter Features  Short circuit withstand time (5 ...
Datasheet PDF File RJH60D7DPQ-E0 PDF File

RJH60D7DPQ-E0
RJH60D7DPQ-E0

Overview
Preliminary Datasheet RJH60D7DPQ-E0 600V - 50A - IGBT Application: Inverter Features  Short circuit withstand time (5 s typ.
)  Low collector to emitter saturation voltage VCE(sat) = 1.
6 V typ.
(at IC = 50 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (100 ns typ.
) in one package  Trench gate and thin wafer technology  High speed switching tf = 50 ns typ.
(at VCC = 300 V, VGE = 15 V, IC = 50 A, Rg = 5 , Ta = 25°C, inductive load) R07DS0740EJ0100 Rev.
1.
00 Apr 19, 2012 Outline RENESAS Package code: PRSS0003ZE-A (Package name: TO-247) C 4 G 1.
Gate 2.
Collector 3.
Emitter 4.
Collector E 1 2 3 www.
DataSheet.
net/ Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage / diode reverse voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 100°C Collector peak current Collector to emitter diode forward current Collector to emitter diode forward peak current Collector dissipation Junction to case thermal resistance (IGBT) Junction to case thermal resistance (Diode) Junction temperature Storage temperature Notes: 1.
PW  10 s, duty cycle  1% 2.
Value at Tc = 25C Symbol VCES / VR VGES IC IC ic(peak) Note1 iDF iDF(peak) Note1 PC Note2 j-c Note2 j-cd Note2 Tj Tstg Ratings 600 ±30 90 50 200 50 200 300 0.
42 1.
07 150 –55 to +150 Unit V V A A A A A W °C/ W °C/ W °C °C R07DS0740EJ0100 Rev.
1.
00 Apr 19, 2012 Page 1 of 9 Datasheet pdf - http://www.
DataSheet4U.
co.
kr/ RJH60D7DPQ-E0 Preliminary Electrical Characteristics (Ta = 25°C) Item Collector to emitter breakdown voltage Zero gate voltage collector current / Diode reverse current Gate to emitter leak current Gate to emitter cutoff voltage Collector to emitter saturation voltage Input capacitance Output capacitance Reveres transfer capacitance Total gate charge Gate to emitter charge Gate to collector charge Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Short circuit withstand time FRD forward voltage FRD reve...


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