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RJH60V1BDPP-M0

Renesas
Part Number RJH60V1BDPP-M0
Manufacturer Renesas
Description IGBT
Published Jul 20, 2012
Detailed Description Preliminary Datasheet RJH60V1BDPP-M0 600V - 8A - IGBT Application: Inverter Features  Short circuit withstand time (6 ...
Datasheet PDF File RJH60V1BDPP-M0 PDF File

RJH60V1BDPP-M0
RJH60V1BDPP-M0

Overview
Preliminary Datasheet RJH60V1BDPP-M0 600V - 8A - IGBT Application: Inverter Features  Short circuit withstand time (6 s typ.
)  Low collector to emitter saturation voltage VCE(sat) = 1.
6 V typ.
(at IC = 8 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (25 ns typ.
) in one package  Trench gate and thin wafer technology  High speed switching tf = 110 ns typ.
(at VCC = 300 V, VGE = 15 V, IC = 8 A, Rg = 5 , inductive load) R07DS0759EJ0100 Rev.
1.
00 May 25, 2011 Outline RENESAS Package code: PRSS0003AF-A (Package name: TO-220FL) C G 1.
Gate 2.
Collector 3.
Emitter 1 2 3 www.
DataSheet.
net/ E Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage / diode reverse...


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