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RJH6086BDPK

Renesas
Part Number RJH6086BDPK
Manufacturer Renesas
Description IGBT
Published Jul 20, 2012
Detailed Description Preliminary Datasheet RJH6086BDPK 600 V - 45 A - IGBT High Speed Power Switching Features  Ultra high speed switching ...
Datasheet PDF File RJH6086BDPK PDF File

RJH6086BDPK
RJH6086BDPK


Overview
Preliminary Datasheet RJH6086BDPK 600 V - 45 A - IGBT High Speed Power Switching Features  Ultra high speed switching tf = 36 ns typ.
(at IC = 30 A, VCC = 300 V, VGE = 15 V, Rg = 5 Inductive Load)  Low on-state voltage  Fast recovery diode R07DS0470EJ0100 Rev.
1.
00 Sep 28, 2011 Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) C 4 G 1.
Gate 2.
Collector 3.
Emitter 4.
Collector (Flange) E 1 2 3 Absolute Maximum Ratings Item Collector to emitter voltage Gate to emitter voltage Collector current Collector peak current Collector to emitter diode forward peak current Collector dissipation Junction to case thermal impedance (IGBT) Junction temperature Storage temperature www.
DataSheet.
net/ (Tc = 25°C) Symbol VCES VGES IC ic(peak) Note1 IDF(peak) Note2 PC j-c Tj Tstg Ratings 600 ±30 45 90 90 198.
4 0.
63 150 –55 to +150 Unit V V A A A W /W °C °C Notes: 1.
Pulse width limited by safe operating area.
2.
Pulse width limited by maximum junction temperature.
R07DS0470EJ0100 Rev.
1.
00 Sep 28, 2011 Page 1 of 7 Datasheet pdf - http://www.
DataSheet4U.
co.
kr/ RJH6086BDPK Preliminary Electrical Characteristics (Ta = 25°C) Item Zero gate voltage collector current Gate to emitter leak current Gate to emitter cutoff voltage Collector to Emitter saturation voltage Input capacitance Output capacitance Reveres transfer capacitance Switching time Symbol ICES IGES VGE(off) VCE(sat) VCE(sat) Cies Coes Cres td(on) tr td(off) tf VECF trr Min   3.
0          — — Typ    2.
65 3.
4 1420 165 15 41 71 84 36 1.
4 100 Max 10 ±1 5.
5 3.
5         1.
9 — Unit A A V V V pF pF pF ns ns ns ns V ns Test Conditions VCE = 600 V, VGE = 0 VGE = ±30 V, VCE = 0 VCE = 10 V, IC = 1 mA IC = 22 A, VGE = 15 V Note3 IC = 45 A, VGE = 15 V Note3 VCE = 25 V VGE = 0 f = 1MHz IC = 30 A VCC = 300 V, VGE = 15 V Rg = 5  Inductive Load IF = 30 A Note3 IF = 30 A diF/dt = 100 A/s Collector to emitter diode forward voltage Collector to emitter diode reverse recovery time Notes...


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