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RJH60F7BDPQ-A0

Renesas
Part Number RJH60F7BDPQ-A0
Manufacturer Renesas
Description IGBT
Published Jul 20, 2012
Detailed Description Preliminary Datasheet RJH60F7BDPQ-A0 600V - 50A - IGBT High Speed Power Switching R07DS0677EJ0200 Rev.2.00 Nov 21, 20...
Datasheet PDF File RJH60F7BDPQ-A0 PDF File

RJH60F7BDPQ-A0
RJH60F7BDPQ-A0

Overview
Preliminary Datasheet RJH60F7BDPQ-A0 600V - 50A - IGBT High Speed Power Switching R07DS0677EJ0200 Rev.
2.
00 Nov 21, 2014 Features  Low collector to emitter saturation voltage VCE(sat) = 1.
35 V typ.
(at IC = 50 A, VGE = 15 V, Tj = 25°C)  Built in fast recovery diode in one package  Trench gate and thin wafer technology  High speed switching tf = 74 ns typ.
(at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Tj = 25°C, inductive load) Outline RENESAS Package code: PRSS0003ZH-A (Package name: TO-247A) C 4 123 1.
Gate 2.
Collector G 3.
Emitter 4.
Collector E Absolute Maximum Ratings Item Collector to emitter voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 100°C ...


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