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RJP1CS04DWT

Renesas
Part Number RJP1CS04DWT
Manufacturer Renesas
Description IGBT
Published Jul 21, 2012
Detailed Description Preliminary Datasheet RJP1CS04DWT/RJP1CS04DWA 1250V - 50A - IGBT Application: Inverter Features  Low collector to emit...
Datasheet PDF File RJP1CS04DWT PDF File

RJP1CS04DWT
RJP1CS04DWT

Overview
Preliminary Datasheet RJP1CS04DWT/RJP1CS04DWA 1250V - 50A - IGBT Application: Inverter Features  Low collector to emitter saturation voltage VCE(sat) = 1.
8 V typ.
(at IC = 50 A, VGE = 15 V, Ta = 25C)  High speed switching  Short circuit withstands time (10 s min.
) R07DS0827EJ0004 Rev.
0.
04 Jun 05, 2012 Outline Die: RJP1CS04DWT-80 2 C 3 1G 1 Wafer: RJP1CS04DWA-80 2 1.
Gate 2.
Collector (The back) 3.
Emitter www.
DataSheet.
net/ E 3 3 Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 100°C Junction temperature Symbol VCES VGES IC Note1 IC Note1 Tj Ratings 1250 ±30 100 50 150 Unit V V A A C Notes: 1.
This...


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