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IRFS3806PBF

International Rectifier
Part Number IRFS3806PBF
Manufacturer International Rectifier
Description Power MOSFET
Published Aug 10, 2012
Detailed Description PD - 97310 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed...
Datasheet PDF File IRFS3806PBF PDF File

IRFS3806PBF
IRFS3806PBF

Overview
PD - 97310 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G IRFB3806PbF IRFS3806PbF IRFSL3806PbF HEXFET® Power MOSFET D Benefits l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability S VDSS RDS(on) typ.
max.
ID D 60V 12.
6mΩ 15.
8mΩ 43A D D S G D G S G S D TO-220AB IRFB3806PbF D2Pak IRFS3806PbF TO-262 IRFSL3806PbF G D S Gate Drain Max.
43 31 170 71 0.
47 ± 20 24 -55 to + 175 300 10lbxin (1.
1Nxm) Source Units A W W/°C V V/ns °C Absolute Maximum Ratings Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG www.
DataSheet.
net/ Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current c Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery e Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.
6mm from case) Mounting torque, 6-32 or M3 screw Avalanche Characteristics EAS (Thermally limited) IAR EAR Single Pulse Avalanche Energy d Avalanche Current c Repetitive Avalanche Energy f 73 25 7.
1 mJ A mJ Thermal Resistance Symbol RθJC RθCS RθJA RθJA Parameter Junction-to-Case j Case-to-Sink, Flat Greased Surface, TO-220 Junction-to-Ambient, TO-220 ij Junction-to-Ambient (PCB Mount) , D Pak ij 2 Typ.
––– 0.
50 ––– ––– Max.
2.
12 ––– 62 40 Units °C/W www.
irf.
com 1 02/29/08 Datasheet pdf - http://www.
DataSheet4U.
co.
kr/ IRFB/S/SL3806PbF Static @ TJ = 25°C (unless otherwise specified) Symbol V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) IDSS IGSS Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp.
Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min.
Typ.
Max.
Units 60 ––– –...


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