DatasheetsPDF.com

ER2001AFCT

Pan Jit International
Part Number ER2001AFCT
Manufacturer Pan Jit International
Description SUPERFAST RECOVERY RECTIFIER
Published Aug 20, 2012
Detailed Description ER2000FCT~ER2006FCT ISOLATION SUPERFAST RECOVERY RECTIFIER VOLTAGE FEATURES • Plastic package has Underwriters Laborator...
Datasheet PDF File ER2001AFCT PDF File

ER2001AFCT
ER2001AFCT


Overview
ER2000FCT~ER2006FCT ISOLATION SUPERFAST RECOVERY RECTIFIER VOLTAGE FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O.
Flame Retardant Epoxy Molding Compound.
• Exceeds environmental standards of MIL-S-19500/228 • Low power loss, high efficiency.
• Low forwrd voltge, high current capability • High surge capacity.
• Super fast recovery times, high voltage.
• Epitaxial chip construction.
• In compliance with EU RoHS 2002/95/EC directives 50 to 600 Volts CURRENT 20 Amperes MECHANICALDATA • Case: ITO-220AB Molded plastic • Terminals: Lead solderable per MIL-STD-750, Method 2026 • Polarity: As marked.
• Standard packaging: Any • Weight: 0.
55 ounces, 1.
56 grams.
.
027(.
67) .
022(.
57) MAXIMUM RATING AND ELECTRICAL CHARACTERISTICSS Ratings at 25°C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20% www.
DataSheet.
net/ PARAMETER Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current at Tc=100o C Peak Forward Surge Current : 8.
3ms single half sine-wave superimposed on rated load(JEDEC method) Maximum Forward Voltage at 10A Maximum DC Reverse Current TJ =25 O C at Rated DC Blocking VoltageTJ =100 O C Maximum Reverse Recovery Time (Note 2) Typical Junction capacitance (Note 1) Typical thermal Resistance (Note 3) Operating Junction and Storage Temperature Range SYMBOL ER2000FCT ER2001FCT ER2001AFCT ER2002FCT ER2003FCT ER2004FCT ER2006FCT UNITS VR R M VR M S VD C IF (A V ) IF S M VF IR 0.
95 1 500 35 85 3.
0 -50 to +150 O 50 35 50 100 70 100 150 105 150 200 140 200 20 150 300 210 300 400 280 400 600 420 600 V V V A A 1.
3 1.
7 V µA trr CJ RθJ c TJ ,TS T G 50 ns pF C/W O C NOTES: 1.
Measured at 1 MHz and applied reverse voltage of 4.
0 VDC.
2.
Reverse Recovery Test Conditions: I F=.
5A, IR=1A, Irr=.
25A.
3.
Both Bonding and Chip structure are available.
STAD-JUN.
05.
200...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)