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AP25G45GEM

Advanced Power Electronics
Part Number AP25G45GEM
Manufacturer Advanced Power Electronics
Description N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
Published Sep 11, 2012
Detailed Description AP25G45GEM Pb Free Plating Product Advanced Power Electronics Corp. ▼ High Input Impedance ▼ High Pick Current Capabili...
Datasheet PDF File AP25G45GEM PDF File

AP25G45GEM
AP25G45GEM

Overview
AP25G45GEM Pb Free Plating Product Advanced Power Electronics Corp.
▼ High Input Impedance ▼ High Pick Current Capability ▼ 4.
5V Gate Drive ▼ Strobe Flash Applications C C C C N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR VCE ICP 450V 150A C G E G E SO-8 E E Absolute Maximum Ratings Symbol VCE VGE IGEP ICP PD@TC=25℃1 TSTG TJ Parameter Collector-Emitter Voltage Gate-Emitter Voltage Pulsed Gate-Emitter Voltage Pulsed Collector Current Maximum Power Dissipation Storage Temperature Range Operating Junction Temperature Range www.
DataSheet.
net/ Rating 450 ±6 ±8 150 2.
5 -55 to 150 -55 to 150 Units V V V A W ℃ ℃ Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol IGES ICES VCE(sat) VGE(th) Qg Qge Qgc td(on) tr td(off) tf Cies Coes Cres RthJA 1 Parameter Gate-Emitter Leakage Current Collector-Emitter Leakage Current (Tj=25℃) Test Conditions VGE=± 6V, VCE=0V VCE=450V, VGE=0V VGE=4.
5V, ICP=150A (Pulsed) Min.
0.
35 - Typ.
6 64.
5 7 30 11.
5 24.
5 150 3.
3 2227 200 79 - ...


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