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2N5830

Part Number	2N5830
Manufacturer	Fairchild Semiconductor
Description	NPN General Purpose Amplifier
Published	Mar 22, 2005
Detailed Description	2N5830 Discrete POWER & Signal Technologies 2N5830 C BE TO-92 NPN General Purpose Amplifier This device is designe...
Datasheet	2N5830 PDF File

Overview

2N5830 Discrete POWER & Signal Technologies 2N5830 C BE TO-92 NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display driving.
Sourced from Process 16.
See 2N5551 for characteristics.
Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25°C unless otherwise noted Parameter Value 100 120 5.
0 200 -55 to +150 Units V V V mA °C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits.
The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics Symbol PD RθJC RθJA TA = 25°C unless otherwise noted Characteristic Total Dev...

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