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STRH40P10

Part Number	STRH40P10
Manufacturer	STMicroelectronics
Description	P-Channel Power MOSFET
Published	Oct 31, 2012
Detailed Description	STRH40P10 Datasheet Rad-Hard 100 V, 34 A P-channel Power MOSFET 1 2 3 TO-254AA D(1) G(3) S(2) SCO6140p Product ...
Datasheet	STRH40P10 PDF File

Overview

STRH40P10 Datasheet Rad-Hard 100 V, 34 A P-channel Power MOSFET 1 2 3 TO-254AA D(1) G(3) S(2) SCO6140p Product status link STRH40P10 Features VDS 100 V ID 34 A • Fast switching • 100% avalanche tested • Hermetic package • 100 krad • SEE radiation hardened RDS(on) typ.
60 mΩ Qg 162 nC Description The STRH40P10 is a P-channel Power MOSFET developed with the Rad-Hard STripFET technology in TO-254AA hermetic package and qualified as per ESCC detail specification No.
5205/025.
Designed for satellite application, it sustains high level of total ionized dose (TID) and immunity to heavy ions effects.
In case of discrepancies between this datasheet and the relevant agency specification, the latter takes precedence.
Product summary Part number STRH40P10HY1 STRH40P10HYG STRH40P10HYT Product summary Quality level ESCC part number Package Engineering - model ESCC flight 5205/025 TO-254AA Note: See Table 8.
Ordering information.
Lead finish Gold Solder dip Radiation level - 100 krad 100 krad DS7072 - Rev 17 - June 2021 For further information contact your local STMicroelectronics sales office.
www.
st.
com 1 Note: STRH40P10 Electrical ratings Electrical ratings For P-channel MOSFET voltage and current polarity is reversed.
Table 1.
Absolute maximum ratings Symbol Parameter VDS(1) Drain-source voltage (VGS = 0) VGS(2) Gate-source voltage Drain current (continuous) at Tcase = 25 °C ID(3) Drain current (continuous) at Tcase = 100 °C IDM(4) Drain current (pulsed) PTOT(3) Total power dissipation at Tcase = 25 °C dv/dt(5) Peak diode recovery voltage slope Top Operating temperature range Tj Max.
operating junction temperature range 1.
This rating is guaranteed at TJ ≥ 25 °C (see Figure 9.
Normalized V(BR)DSS vs temperature).
2.
This value is guaranteed over the full range of temperature.
3.
Rated according to the Rthj-case + Rthc-s 4.
Pulse width limited by safe operating area.
5.
ISD ≤ 40 A, di/dt ≤ 100 A/μs, VDD = 80 %V(BR)DSS.
Val...

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