May/2008
MITSUBISHI SEMICONDUTOR
MGF4934AM/BM
SUPER LOW NOISE InGaAs HEMT (4pin flat lead package)
DESCRIPTION
The MGF4934BM super-low noise HEMT (High Electron Mobility Transistor) is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost performance.
Outline Drawing
FEATURES
Low noise figure @ f=12GHz NFmin. = 0. 50dB (Typ. ) High associated gain @ f=12GHz Gs = 12. 5dB (Typ. )
Fig. 1
MITSUBISHI Proprietary
APPLICATION
S to Ku band low noise amplifiers
Not to be reproduced or disclosed without permission by Mitsubishi Electric
QUALITY GRADE
GG
RECOMMENDED BIAS CONDITIONS
VDS=2V , ID=10mA
ORDERING INFORMATION
Tape & reel 3000pcs/reel
Keep Safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measure such as (I) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.
www. DataSheet. net/
ABSOLUTE MAXIMUM RATINGS
Symbol VGDO VGSO ID PT Tch Tstg Parameter Gate to drain voltage Gate to source voltage Drain current Total power dissipation Channel temperature Storage temperature
(Ta=25°C )
Ratings -4 -4 IDSS 50 125 -55 to +125
(Ta=25°C )
Unit V V mA mW °C °C
ELECTRICAL CHARACTERISTICS
Symbol V(BR)GDO IGSS IDSS VGS(off) Gs NFmin. Parameter
Gate to drain breakdown voltage Gate to source leakage current Saturated drain current Gate to source cut-off voltage Associated gain Minimum noise figure
Test conditions MIN. IG=-10µA VGS=-2V,VDS=0V VGS=0V,VDS=2V VDS=2V,ID=500µA VDS=2V, ID=10mA,f=12GHz -3. 5 -12 -0. 1 11. 5 --
Limits TYP. ----12. 5 0. 50 MAX -50 60 -1. 5 -0. 80
Unit V µA mA V...
MGF4934BM PDF File
