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MGFC47B3538B

Part Number MGFC47B3538B
Manufacturer Mitsubishi Electric Semiconductor
Title C band Internally Matched Power GaAs FET
Description The MGFC47B3538B is an internally impedance-matched GaAs power FET especially designed for use in 3.5 – 3.8 GHz band amplifiers. The hermetically ...
Features Crass AB operation Internally matched to 50(ohm)
 High output power: Po(SAT) = 50 W (typ.)
 High power gain: GP = 10 dB (TPE.) @Po = 37dBm
 Distortion: EVM = 2.0% (TPE.) @ Po = 37dBm Recommended Bias Condition
 Vd = 12(V)
 ID = 1.5 (A)
 Rg = 10 ohm GF-60 www.DataSheet.net/ ABSOLUTE MAXIMUM ...

File Size 202.16KB
Datasheet MGFC47B3538B PDF File







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