MGFC47B3538B
3. 5 – 3. 8GHz BAND / 50W
DESCRIPTION
The MGFC47B3538B is an internally impedance-matched GaAs power FET especially designed for use in 3. 5 – 3. 8 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.
OUTLINE DRAWING
FEATURES
Crass AB operation Internally matched to 50(ohm) High output power: Po(SAT) = 50 W (typ. ) High power gain: GP = 10 dB (TPE. ) @Po = 37dBm Distortion: EVM = 2. 0% (TPE. ) @ Po = 37dBm
Recommended Bias Condition
Vd = 12(V) ID = 1. 5 (A) Rg = 10 ohm
GF-60
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ABSOLUTE MAXIMUM RATINGS
Symbol VGDO VGSO MAXID PT *1 Tch Tstg
*1 : Tc=25deg. C
(Ta=25deg. C) Ratings -15 -10 12 115 175 -55 / +150 Unit V V A W deg. C deg. C
Parameter Gate to drain voltage Gate to source voltage Maximum drain current Total power dissipation Channel temperature Storage temperature
Keep Safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs , with appropriate measure such as (I) placement of substitutive , auxiliary circuits , (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap.
ELECTRICAL CARACTERISTICS
Symbol VGS(off) Po(SAT) GP ID EVM *2
Rth(ch-c) *3
(Ta=25deg. C) Test conditions VDS = 3V , ID = 100mA VDS=12V, ID(RF off)=1. 5A, f=3. 5-3. 8GHz VDS=12V, ID(RF off)=1. 5A, f=3. 5-3. 8GHz Pout=37dBm delta Vf method Min. -0. 5 9. 0 Limits Typ. 47 10. 5 2. 0 1. 5 0. 65 Unit Max. -3. 0 3 2. 5 1. 2 V dBm dB A %
d eg. C/W
Parameter Gate to source cut-off voltage Output power Power gain Drain current Error Vector Magnitude Thermal resistance
*2 :WiMAX Downlink , 64QA M-3/4, Channel Bandwidth: 7MHz *3 : Channel-case...
MGFC47B3538B PDF File
