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RD15HVF1

Mitsubishi Electric Semiconductor
Part Number RD15HVF1
Manufacturer Mitsubishi Electric Semiconductor
Description Silicon MOSFET Power Transistor
Published Nov 5, 2012
Detailed Description < Silicon RF Power MOS FET (Discrete) > RD15HVF1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 15W DESCRIPT...
Datasheet PDF File RD15HVF1 PDF File

RD15HVF1
RD15HVF1

Overview
< Silicon RF Power MOS FET (Discrete) > RD15HVF1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 15W DESCRIPTION RD15HVF1 is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers applica -tions.
OUTLINE DRAWING 9.
1+/-0.
7 3.
6+/-0.
2 2 1.
3+/-0.
4 12.
3+/-0.
6 3.
2+/-0.
4 4.
8MAX 9+/-0.
4 FEATURES High power and High Gain: Pout>15 W, Gp>14 dB @Vds=12.
5 V,f=175 MHz High Efficiency: 60 % (typ) on VHF Band Integrated gate protection diode APPLICATION For output stage of high power amplifiers in VHF/UHF Band mobile radio sets.
12.
3MIN 1.
2+/-0.
4 0.
8+0.
10/-0.
15 123 2.
5 2.
5 0.
5+0.
10/-0.
15 3.
1+/-0.
6 4.
5+/-0.
5 5deg PINS 1:GAT E 9.
5MAX 2:SOURCE note: 3:DRAIN Torelance of no designation means typical value.
Dimension in mm.
RoHS COMPLIANT RD15HVF1-501 is a RoHS compliant products.
This product includes the lead in high melting temperature type solders.
However, it is applicable to the following exceptions of RoHS Directions.
1.
Lead in high melting temperature type solders(i.
e.
tin-lead solder alloys containing more than85% lead.
) Publication Date : Jun.
2019 1 < Silicon RF Power MOS FET (Discrete) > RD15HVF1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 15W ABSOLUTE MAXIMUM RATINGS (Tc=25°C , UNLESS OTHERWISE NOTED) SYMBOL PARAMETER CONDITIONS Vdss Drain to source voltage Vgs=0V Vgss Gate to source voltage Vds=0V Pch Channel dissipation Tc=25°C Pin Input power Zg=Zl=50 Ids Drain current - Tch Channel temperature - Tstg Storage temperature - Rth j-c Thermal resistance junction to case Note 1: Above parameters are guaranteed independently.
RATINGS 30 -5 to +10 48 1.
5 4 150 -40 to +150 2.
6 UNIT V V W W A °C °C °C/W ELECTRICAL CHARACTERISTICS (Tc=25°C , UNLESS OTHERWISE NOTED) SYMBOL PARAMETER CONDITIONS LIMITS MIN TYP MAX.
Idss Zero gate voltage drain current Vds=17V, Vgs=0V - - 100 Igss Gate to source leak current Vgs=10V, Vds=0V - -1 VTH Gate threshold Voltage Vds=12V, Ids=1mA 2.
8 ...


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