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RD20HMF1

Part Number	RD20HMF1
Manufacturer	Mitsubishi Electric Semiconductor
Description	Silicon MOSFET Power Transistor
Published	Nov 5, 2012
Detailed Description	< Silicon RF Power MOS FET (Discrete) > RD20HMF1 RoHS Compliance, Silicon MOSFET Power Transistor,900MHz,20W DESCRIPTI...
Datasheet	RD20HMF1 PDF File

Overview

< Silicon RF Power MOS FET (Discrete) > RD20HMF1 RoHS Compliance, Silicon MOSFET Power Transistor,900MHz,20W DESCRIPTION RD20HMF1 is a MOS FET type transistor specifically designed for 900MHz-band RF power amplifiers applications.
7.
2+/-0.
5 OUTLINE DRAWING 22.
0+/-0.
3 18.
0+/-0.
3 7.
6+/-0.
3 4-C1 High power gain: Pout>20W, Gp>8.
2dB @Vdd=12.
5V,f=900MHz High Efficiency: 55%typ.
2.
8+/-0.
3 0.
10 2 3 R1.
6 14.
0+/-0.
4 FEATURES 1 6.
6+/-0.
3 APPLICATION For output stage of high power amplifiers in 900MHz band Mobile radio sets.
3.
0+/-0.
4 5.
1+/-0.
5 PIN 1.
Drain 2.
Source 3.
Gate UNIT:mm RoHS COMPLIANT RD20HMF1-101 is a RoHS compliant products.
www.
DataSheet.
net/ RoHS compliance is indicate by the letter “G” after the Lot Marking.
ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED) SYMBOL VDSS VGSS Pch Pin ID Tch Tstg Rth j-c PARAMETER Drain to source voltage Gate to source voltage Channel dissipation Input power Drain current Channel temperature Storage temperature Thermal resista...

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RD20HMF1 Silicon MOSFET Power Transistor - Mitsubishi Electric Semiconductor

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