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SIC779

Vishay Siliconix
Part Number SIC779
Manufacturer Vishay Siliconix
Description Integrated DrMOS Power Stage
Published Nov 15, 2012
Detailed Description SiC779 Vishay Siliconix Integrated DrMOS Power Stage DESCRIPTION The SiC779 is an integrated solution that contains PWM...
Datasheet PDF File SIC779 PDF File

SIC779
SIC779

Overview
SiC779 Vishay Siliconix Integrated DrMOS Power Stage DESCRIPTION The SiC779 is an integrated solution that contains PWM optimized n-channel MOSFETs (high side and low side) and a full featured MOSFET driver IC.
The device complies with the Intel DrMOS standard for desktop and server Vcore power stages.
The SiC779 delivers up to 40 A continuous output current and operates from an input voltage range of 3 V to 16 V.
The integrated MOSFETs are optimized for output voltages in the ranges of 0.
8 V to 2.
0 V with a nominal input voltage of 12 V.
The device can also deliver very high power at 5 V output for ASIC applications.
The SiC779 incorporates an advanced MOSFET gate driver IC.
This IC accepts a single PWM input from the VR controller and converts it into the high side and low side MOSFET gate drive signals.
The driver IC is designed to implement the skip mode (SMOD) function for light load efficiency improvement.
Adaptive dead time control also works to improve efficiency at all load p...


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