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BC108B

Part Number BC108B
Manufacturer Comset Semiconductors
Title (BC107 - BC109) Low noise general purpose audio amplifiers
Description NPN BC107 – BC108 – BC109 LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS The BC107, BC108 and BC109 are silicon planar epitaxial NPN transistors mount...
Features 8 BC109 Min - Typ - Max 15 Unit nA ICBO Collector Cutoff Current VCB = 20 V IE = 0 V Tj = 150°C VEB = 5 V IC = 0 IC = 10 mA IB = 0 IC = 10 µA VBE = 0 - - 15 µA IEBO Emitter Cutoff Current Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage 45 20 20 50 30 30 5 - 50 - ...

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BC108 : BC107 BC108 BC109 MECHANICAL DATA Dimensions in mm (inches) 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) GENERAL PURPOSE SMALL SIGNAL NPN BIPOLAR TRANSISTOR 5.33 (0.210) 4.32 (0.170) 12.7 (0.500) min. 0.48 (0.019) 0.41 (0.016) dia. FEATURES • SILICON NPN • HERMETICALLY SEALED TO18 • SCREENING OPTIONS AVAILABLE 2.54 (0.100) Nom. 3 2 1 TO–18 METAL PACKAGE Underside View PIN 1 – Emitter PIN 2 – Base PIN 3 – Collector ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO VCEO VCES Collector – Base Continuous Voltage BC017 BC108, BC109 Collector – Emitter Continuous Voltage With Zero Base Current BC107 BC108, BC109 Collector – Emitter Continuous Voltage With Base Shortc.

BC108 : NPN transistor in a TO-18; SOT18 metal package. PNP complement: BC177. 3 BC107; BC108; BC109 PINNING PIN 1 2 3 emitter base collector, connected to the case DESCRIPTION handbook, halfpage 1 3 2 MAM264 2 1 Fig.1 Simplified outline (TO-18; SOT18) and symbol. QUICK REFERENCE DATA SYMBOL VCBO PARAMETER collector-base voltage BC107 BC108; BC109 VCEO collector-emitter voltage BC107 BC108; BC109 ICM Ptot hFE peak collector current total power dissipation DC current gain BC107 BC108 BC109 fT transition frequency IC = 10 mA; VCE = 5 V; f = 100 MHz Tamb ≤ 25 °C IC = 2 mA; VCE = 5 V 110 110 200 100 450 800 800 − MHz open base − − − − 45 20 200 300 V V mA mW open emitter − − 50 30 V V CONDITIONS.

BC108 : The BC107 and BC108 are silicon planar epitaxial NPN transistors in TO-18 metal case. They are suitable for use in driver stages, low noise input stages and signal processing circuits of television reveivers. The PNP complemet for BC107 is BC177. TO-18 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC P t ot T stg Tj Parameter BC107 Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Total Dissipation at T amb ≤ 25 C o at T case ≤ 25 C St orage Temperature Max. Operating Junction Temperature o Value BC108 30 20 5 100 0.3 0.75 -55 to 175 175 50 45 6 Unit V V V mA W W o o C C 1/6 November 1997.

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BC108 : .

BC108 : www.DataSheet4U.com 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 www.DataSheet4U.com Central TM Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 www.centralsemi.com .

BC108 : Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Power Dissipation at T a=25ºC Derate above 25ºC Power Dissipation at T c=25ºC Derate above 25ºC Operating And Storage Junction Temperature Range THERMAL CHARACTERISTICS Junction to Ambient in free air Junction to Case SYMBOL VCEO VCBO VEBO IC PD PD Tj, Tstg BC107 45 50 6.0 BC108 25 30 5.0 200 300 1.72 750 4.29 - 65 to +200 BC109 25 30 5.0 UNIT V V V mA mW mW/ ºC mW mW/ ºC ºC Rth (j-a) Rth (j-c) 583 233 ºC/W ºC/W www.DataSheet4U.com ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise ) DESCRIPTION SYMBOL TEST CONDITION V IC=2mA, IB=0 Collector Emitter Voltage CEO VEBO IE=10µA, IC=.

BC108 : NPN BC107 – BC108 – BC109 LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS The BC107, BC108 and BC109 are silicon planar epitaxial NPN transistors mounted in TO-18 metal package. They are suitable for use in drive audio stages, low-noise input audio stages and as low power, high gain general purpose transistors. The complementary PNP are BC177, BC178 and BC179. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VCEO VCBO VEBO IC ICM PD TJ TStg Collector-Emitter Voltage (IB =0) Collector-Base Voltage (IE =0) Emitter-Base Voltage (IC =0) Collector Current Collector Peak Current Total Power Dissipation @ Tamb = 25° Junction Temperature Storage Temperature range BC107 45 50 6 BC108 20 30 5 100 200.

BC108 : MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Total Device Dissipation « Ta = 25°C Derate above 25°C Total Device Dissipation r« Tc = 25°C Tc = 100°C Derate above 25°C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol VCEO VCBO VEBO "C PD pd BC BC BC 107 108 109 45 25 25 50 30 30 65 5 0.2 0.6 2.28 1 6.67 Tj, T s tg -65 to +200 Unit Vdc Vdc Vdc Amp Watt mW/°C Watt mW/°C °C Symbol RftJC Max 175 Unit °C/W BC107 BC108 BC109 CASE 22-03, STYLE 1 TO-18 (TO-206AA) TRANSISTOR NPN SILICON ELECTRICAL CHARACTERISTICS (Ta = 25°C unless ot.

BC108 : Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous Power Dissipation at Ta = 25°C Derate Above 25°C Power Dissipation at Tc = 25°C Derate Above 25°C Operating And Storage Junction Temperature Range Thermal Resistance Junction to Case SYMBOL VCEO VCBO VEBO IC PD PD Tj, Tstg BC107 BC108 BC109 UNIT 45 25 25 V 50 30 30 V 6.0 5.0 5.0 V 0.2 A 0.6 W.

BC108 : Siemens Transistor BC148 Datasheet Datasheet Rev. 1.3 – 02/19 – data without warranty / liability Siemens Transistor BC148 Datasheet Datasheet Rev. 1.3 – 02/19 – data without warranty / liability Siemens Transistor BC148 Datasheet Datasheet Rev. 1.3 – 02/19 – data without warranty / liability Siemens Transistor BC148 Datasheet Datasheet Rev. 1.3 – 02/19 – data without warranty / liability Siemens Transistor BC148 Datasheet Datasheet Rev. 1.3 – 02/19 – data without warranty / liability Siemens Transistor BC148 Datasheet Datasheet Rev. 1.3 – 02/19 – data without warranty / liability Siemens Transistor BC148 Datasheet Datasheet Rev. 1.3 – 02/19 – data without warranty.

BC108A : www.DataSheet4U.com 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 www.DataSheet4U.com Central TM Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 www.centralsemi.com .

BC108A : Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Power Dissipation at T a=25ºC Derate above 25ºC Power Dissipation at T c=25ºC Derate above 25ºC Operating And Storage Junction Temperature Range THERMAL CHARACTERISTICS Junction to Ambient in free air Junction to Case SYMBOL VCEO VCBO VEBO IC PD PD Tj, Tstg BC107 45 50 6.0 BC108 25 30 5.0 200 300 1.72 750 4.29 - 65 to +200 BC109 25 30 5.0 UNIT V V V mA mW mW/ ºC mW mW/ ºC ºC Rth (j-a) Rth (j-c) 583 233 ºC/W ºC/W www.DataSheet4U.com ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise ) DESCRIPTION SYMBOL TEST CONDITION V IC=2mA, IB=0 Collector Emitter Voltage CEO VEBO IE=10µA, IC=.

BC108A : NPN BC107 – BC108 – BC109 LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS The BC107, BC108 and BC109 are silicon planar epitaxial NPN transistors mounted in TO-18 metal package. They are suitable for use in drive audio stages, low-noise input audio stages and as low power, high gain general purpose transistors. The complementary PNP are BC177, BC178 and BC179. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VCEO VCBO VEBO IC ICM PD TJ TStg Collector-Emitter Voltage (IB =0) Collector-Base Voltage (IE =0) Emitter-Base Voltage (IC =0) Collector Current Collector Peak Current Total Power Dissipation @ Tamb = 25° Junction Temperature Storage Temperature range BC107 45 50 6 BC108 20 30 5 100 200.

BC108B : The CENTRAL SEMICONDUCTOR BC107, BC108, BC109 series types are small signal NPN silicon transistors, manufactured by the epitaxial planar process, designed for general purpose amplifier applications. MARKING: FULL PART NUMBER TO-18 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg JC BC107 50 45 6.0 BC108 BC109 30 30 25 25 5.0 5.0 200 600 -65 to +200 175 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICBO VCB=45V (BC107) ICBO VCB=45V, TA=125°.

BC108B : Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Power Dissipation at T a=25ºC Derate above 25ºC Power Dissipation at T c=25ºC Derate above 25ºC Operating And Storage Junction Temperature Range THERMAL CHARACTERISTICS Junction to Ambient in free air Junction to Case SYMBOL VCEO VCBO VEBO IC PD PD Tj, Tstg BC107 45 50 6.0 BC108 25 30 5.0 200 300 1.72 750 4.29 - 65 to +200 BC109 25 30 5.0 UNIT V V V mA mW mW/ ºC mW mW/ ºC ºC Rth (j-a) Rth (j-c) 583 233 ºC/W ºC/W www.DataSheet4U.com ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise ) DESCRIPTION SYMBOL TEST CONDITION V IC=2mA, IB=0 Collector Emitter Voltage CEO VEBO IE=10µA, IC=.




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