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BC160

Comset Semiconductors
Part Number BC160
Manufacturer Comset Semiconductors
Description (BC160 / BC161) GENERAL PURPOSE TRANSISTORS
Published Dec 3, 2012
Detailed Description PNP BC160 – BC161 GENERAL PURPOSE TRANSISTORS They are silicon planar epitaxial PNP transistors mounted in TO-39 metal p...
Datasheet PDF File BC160 PDF File

BC160
BC160


Overview
PNP BC160 – BC161 GENERAL PURPOSE TRANSISTORS They are silicon planar epitaxial PNP transistors mounted in TO-39 metal package.
They are particulary designed for audio amplifiers and switching applications up to 1A.
NPN complements are the BC140 – BC141.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS Symbol -VCBO -VCEO -VEBO -IC -IB Ptot TJ TStg Ratings Collector-Base Voltage IE = 0 Collector-Emitter Voltage IB = 0 Emitter-Base Voltage IC = 0 Collector Current Base Current @ Tcase= < 45° Total Power Dissipation @ Tamb= < 45° Junction Temperature Storage Temperature range BC160 BC161 BC160 BC161 BC160 BC161 BC160 BC161 BC160 BC161 Value 40 60 40 60 5 1 0.
1 3.
7 0.
65 175 -55 to +175 Unit V V V A A W °C °C www.
DataSheet.
net/ THERMAL CHARACTERISTICS Symbol RthJ-c RthJ-amb Ratings Thermal Resistance, Junction-case Thermal Resistance, Junction-ambient Value 35 200 Unit K/ W K/ W COMSET SEMICONDUCTORS 1/3 Datasheet pdf - http://www.
DataSheet4U.
co.
kr/ PNP BC160 – BC161 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) BC160 BC161 BC160 BC161 BC160 BC161 BC160 BC161 BC160 BC161 Min 40 60 40 60 5 Gr 10 Gr 16 Gr 10 Gr 16 Gr 10 Gr 16 63 100 50 - Typ 0.
1 0.
35 0.
6 1 80 120 100 160 20 30 15 - Max 100 100 - Unit nA µA V V V -ICES -VCB0 -VCE0 (*) -VEB0 -VCE(SAT) (*) -VBE (*) IE= 0 ;VCES= 40 V IE= 0 ;VCES= 60 V Collector – Cutoff Current VCES=40 V IE= 0 ; V Tamb = 150°c VCES=60 V Collector – Base -IC = 100 µA IE= 0 Breakdown Voltage Collector – Emitter -IC = 10 mA IB= 0 Breakdown Voltage Emitter – Base -IE= 100 µA Breakdown Voltage IC= 0 -IC= 100 mA , -IB= 10 mA Collector-Emitter -IC= 500 mA , -IB= 50 mA saturation Voltage -IC= 1 A, -IB= 100 mA Base-Emitter Voltage -IC= 1 A , -VCE= 1V www.
DataSheet.
net/ -IC= 100 µA , -VCE= 1 V hFE (*) DC Current Gain -IC= 100 mA , -VCE= 1 V -IC= 1 A , -VCE= 1 V fT CCBO toff ton Transition Frequency -IC= 50 mA , -VCE= 10 V Collector – base IE= 0 ; -VCB= 20V f = 1 MHZ Capacitance -IC=100 mA T...



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