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BD410

Comset Semiconductors
Part Number BD410
Manufacturer Comset Semiconductors
Description NPN EPITAXIAL SILICON POWER TRANSISTOR
Published Dec 6, 2012
Detailed Description SEMICONDUCTORS BD410 NPN EPITAXILA SILICON POWER TRANSISTORS They are silicon epitaxial planar NPN power transistors mo...
Datasheet PDF File BD410 PDF File

BD410
BD410

Overview
SEMICONDUCTORS BD410 NPN EPITAXILA SILICON POWER TRANSISTORS They are silicon epitaxial planar NPN power transistors mounted in a TO-126 plastic package.
AF-amplifier for high supply voltage They are intended for control circuit, vertical output stages in TVsets, and general purpose applications.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS Symbol VCBO VCEO VEBO IC ICM PT tJ ts tL Collector-Base Voltage Ratings Value 500 www.
DataSheet.
net/ Unit V V V A A W Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Peak Current Total Power Dissipation Junction Temperature Storage Temperature range 325 5 1 1.
5 Ta =25°C Tc =25°C 1.
25 20 -55 to +125 -55 to +125 260 °C Lead Temperature 1.
6 mm From Case For 10 Secondes 25/09/2012 05/11/2012 COMSET SEMICONDUCTORS 1/3 Datasheet pdf - http://www.
DataSheet4U.
co.
kr/ SEMICONDUCTORS BD410 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol VCEO VCBO VEBO ICES VCE(SAT) VBE hFE Ratings Collector-Emitter Breakdown Voltage (*) Collector-Base Breakdown Voltage Collector-Base Breakdown Voltage Collector Cutoff Current Collector-Emitter saturation Voltage (*) Base-Emitter Voltage (*) DC Current Gain (*) Test Condition(s) Min 325 500 5 25 30 20 Typ - Max 100 0.
5 1.
5 240 - Unit V V V µA V V - IC= 10 mA, IB= 0 IC= 0.
5 mA, IE= 0 IE= 50 µA, IC= 0 VCE = 300 V, IB= 0 IC= 100 mA, IB= 10 mA IC= 100 mA, IB= 10 mA IC= 5 mA, VCE= 10 V IC= 50 mA, VCE= 10 V IC= 100 mA, VCE= 10 V www.
DataSheet.
net/ SWITCHING TIMES.
Symbol Cobo Cibo Ratings Output Capacitance Input Capacitance Test Condition(s) Min - Typ 5.
5 90 Mx - Unit pF IE= 0, VCB= 10 V, f= 1 MHz IE= 0, VCB= 0.
5 V, f= 1 MHz - (*) These parameters must be measured using pulse techniques, tp 300 µs, Duty Cycle ∠ 2% 25/09/2012 05/11/2012 COMSET SEMICONDUCTORS 2/3 Datasheet pdf - http://www.
DataSheet4U.
co.
kr/ SEMICONDUCTORS BD410 MECHANICAL DATA CASE TO-126 DIMENSIONS min 7.
4 10.
5 2.
4 0.
7 2.
25 typ.
0.
49 0.
75 4.
4 typ.
15.
7 typ.
1.
27 ...


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