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BD433

Inchange Semiconductor
Part Number BD433
Manufacturer Inchange Semiconductor
Description Silicon NPN Power Transistors
Published Dec 6, 2012
Detailed Description isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage - : VCEO(SUS)= 22V(Min) ·Complement ...
Datasheet PDF File BD433 PDF File

BD433
BD433


Overview
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage - : VCEO(SUS)= 22V(Min) ·Complement to type BD434 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for medium power linear and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 22 V VCES Collector-Emitter Voltage 22 V VCEO Collector-Emitter Voltage 22 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A ICM Collector Current-Pulse 7 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1 A 36 W 150...



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