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CGH40120F

CREE
Part Number CGH40120F
Manufacturer CREE
Description RF Power GaN HEMT
Published Dec 6, 2012
Detailed Description CGH40120F 120 W, RF Power GaN HEMT Cree’s CGH40120F is an unmatched, gallium nitride (GaN) high electron mobility transi...
Datasheet PDF File CGH40120F PDF File

CGH40120F
CGH40120F

Overview
CGH40120F 120 W, RF Power GaN HEMT Cree’s CGH40120F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).
The CGH40120F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications.
GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40120F ideal for linear and compressed amplifier circuits.
The transistor is available in a flange package.
Package Type s: 440193 PN: CGH4012 0F FEATURES • Up to 2.
5 GHz Operation • 20 dB Small Signal Gain at 1.
0 GHz • 15 dB Small Signal Gain at 2.
0 GHz • 120 W Typical PSAT • 70 % Efficiency at PSAT • 28 V Operation APPLICATIONS • 2-Way Private Radio • Broadband Amplifiers • Cellular Infrastructure www.
DataSheet.
net/ • Test Instrumentation • Class A, AB, Linear amplifiers suitable for OFDM, W-CDMA, EDGE, CDMA waveforms il 2012 Rev 2.
5 – Apr Subject to change without notice.
www.
cree.
com/wireless 1 Datasheet pdf - http://www.
DataSheet4U.
co.
kr/ Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature Parameter Drain-Source Voltage Gate-to-Source Voltage Storage Temperature Operating Junction Temperature Maximum Forward Gate Current Maximum Drain Current1 Soldering Temperature2 Screw Torque Thermal Resistance, Junction to Case3 Case Operating Temperature 3,4 Symbol VDSS VGS TSTG TJ IGMAX IDMAX TS Rating 84 -10, +2 -65, +150 225 30 12 245 80 1.
5 -40, +150 Units Volts Volts ˚C ˚C mA A ˚C in-oz ˚C/W ˚C Conditions 25˚C 25˚C 25˚C 25˚C τ RθJC TC 85˚C 30 seconds Note: 1 Current limit for long term, reliable operation 2 Refer to the Application Note on soldering at www.
cree.
com/products/wireless_appnotes.
asp 3 Measured for the CGH40120F at PDISS = 112 W.
4 See also, the Power Dissipation De-rating Curve on Page 7.
Electrical Characteristics (TC = 25˚C) Characteristics DC Characteristics 1 Symbol Min.
Typ.
Max.
Units Conditions Gate Threshold Voltage Gate Quiescent Voltage Sa...


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