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2N6255

Part Number	2N6255
Manufacturer	Microsemi Corporation
Description	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Published	Mar 22, 2005
Detailed Description	140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 2N6255 RF & MICROWAVE DISCR...
Datasheet	2N6255 PDF File

Overview

140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 2N6255 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • Silicon NPN, To-39 packaged VHF Transistor 3.
0 Watt Power Output @ 175 MHz Power Gain, GPE = 7.
8 dB Efficiency = 50% 1.
Emitter 2.
Base 3.
Collector TO-39 DESCRIPTION: Silicon NPN transistor, designed for 12.
5 volt VHF equipment.
Applications include amplifier; pre-driver, driver, and output stages.
Also suitable for oscillator and frequency-multiplier functions.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Collector-Base Voltage Emitter-Base Voltage Collector Current Value 18 36 4.
0 1 Unit Vdc Vdc Vdc A Thermal Data P D Total Device Dissipation @ TA = 25ºC Derate above 25ºC 5.
0 28.
5 Watts mW/ ºC MSC1306.
PDF 10-25-99 2N6255 ELECTRICAL SPECIFICATIONS (Tcase = 25°C) STATIC (off) Symbol BVCES BVCEO BVEBO ICES ICBO Test Conditions Min.
Collector-Emitter Breakdown Voltage (IC = 5.
0 mAdc, VBE =0Vdc) Collector-Emitter Breakdown Voltage (IC=10 mAdc, IB=0) Emitter-Base Breakdown Voltage (IE = 1.
0 mAdc, IC = 0) Collector Cutoff Current (VCE = 15 Vdc, VBE = 0 Vdc) Emitter Cutoff Current (VCB = 15 Vdc, IE = 0) 36 18 4.
0 Value Typ.
5.
0 .
25 Max.
Unit Vdc Vdc Vdc mA mA (on) HFE DC Current Gain (IC = 250 mAdc, VCE = 5.
0 Vdc) 5.
0 - DYNAMIC Symbol COB Test Conditions Output Capacitance (VCB = 12.
5Vdc, f = 1.
0 MHz Value 15 20 pF FUNCTIONAL Symbol GPE ηC Power Gain Test Conditions Min.
Test Circuit-Figure 1 Pout = 3.
0 W, VCC = 12.
5Vdc f = 175 MHz Test Circuit-Figure 1 Pout = 3.
0 W, VCC = 12.
5Vdc f = 175 MHz 7.
8 Value Typ.
Max.
Unit dB Collector Efficiency 50 - - % MSC1306.
PDF 10-25-99 2N6255 12.
5 Vdc C6 C5 RFC2 L2 C4 POUT (RL=50 OHMS) C1 PIN (RS=50 OHMS) RFC1 C2 Bead C3 L1 Figure 1 - 175 MHz RF AMPLIFIER CIRCUIT FOR GPE, AND EFFICIENCY SPECIFICATIONS.
C1,3: 2.
0-50 pF ARCO 461 ELEMENCO C5: 1000 pF FEED THRU L1: 1 TURN #18 AWG ¼” I.
D.
RFC2: 0.
15 uH MOLDED CHOK...

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