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BDX33

Comset Semiconductors
Part Number BDX33
Manufacturer Comset Semiconductors
Description COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
Published Dec 10, 2012
Detailed Description NPN BDX33 – BDX33A – BDX33B – BDX33C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS The BDX33B, BDX33B and BDX33C a...
Datasheet PDF File BDX33 PDF File

BDX33
BDX33

Overview
NPN BDX33 – BDX33A – BDX33B – BDX33C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS The BDX33B, BDX33B and BDX33C are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are mounted in Jedec TO-220 plastic package.
They are intented for use in power linear and switching applications.
The complementary PNP types are the BDX34A, BDX34B and BDX34C respectively.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS Symbol Ratings www.
DataSheet.
net/ Value BDX33 BDX33A BDX33B BDX33C BDX33 BDX33A BDX33B BDX33C 45 60 80 100 45 60 80 100 10 15 0.
25 70 -65 to +150 Unit VCEO Collector-Emitter Voltage IB=0 V VCBO Collector-Base Voltage IE=0 IC(RMS) ICM @ TC = 25° V IC IB PT TJ TS Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature A A W °C THERMAL CHARACTERISTICS Symbol RthJ-C Ratings Thermal Resistance, Junction to Case Value 1.
78 Unit °C/W 23/10/2012 COMSET SEMICONDUCTORS 1/4 Datasheet pdf - http://www.
DataSheet4U.
co.
kr/ NPN BDX33 – BDX33A – BDX33B – BDX33C ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Collector-Emitter Breakdown Voltage (*) Test Condition(s) BDX33 BDX33A BDX33B BDX33C BDX33 BDX33A BDX33B BDX33C BDX33 BDX33A BDX33B BDX33C BDX33 BDX33A BDX33B BDX33C BDX33 BDX33A BDX33B BDX33C BDX33 BDX33A BDX33B BDX33C BDX33 BDX33A BDX33B BDX33C BDX33 BDX33A BDX33B BDX33C Min 45 60 80 100 45 60 80 100 45 60 80 100 - Typ - Max 0.
5 Unit VCEO(SUS) IC=100 mA V VCER(SUS) Collector-Emitter Sustaining Voltage (*) IB=100 mA, RBE=100Ω V VCEV(SUS) Collector-Emitter Sustaining Voltage (*) IC=100 mA VBE=-1.
5 V VCB=22V VCB=30V VCB=40V VCB=50V VCB=22V, TC=100°C VCB=30V, TC=100°C VCB=40V, TC=100°C VCB=50V, TC=100°C www.
DataSheet.
net/ V ICEO Collector Cutoff Current mA 10 IEBO Emitter Cutoff Current VBE=-5 V - - 5.
0 mA ICBO Collector-Base Cutoff Current VCBO=45 V VCBO=60 V VCBO=80 V VCBO=100 V - - 0.
2 mA 23/10/2012 COMSET SEMICONDUCTORS ...


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