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BDX63

Inchange Semiconductor
Part Number BDX63
Manufacturer Inchange Semiconductor
Description Silicon NPN Darlington Power Transistor
Published Dec 10, 2012
Detailed Description isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector Current -IC= 8A ·High DC Current Gain-hFE= 1000(Min)...
Datasheet PDF File BDX63 PDF File

BDX63
BDX63

Overview
isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector Current -IC= 8A ·High DC Current Gain-hFE= 1000(Min)@ IC= 3A ·Complement to Type BDX62/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BDX63 80 VCBO Collector-Base Voltage BDX63A 100 BDX63B 120 BDX63C 140 BDX63 60 VCEO Collector-Emitter Voltage BDX63A 80 BDX63B 100 BDX63C 120 VEBO Emitter-Base Voltage 5 IC Collector Current-Continuous 8 ICM Collector Current-Peak 12 IB Base Current-Continuous 0.
15 PC Collector Power Dissipation @ TC=25℃ 90 TJ Junction Temperature 200 Tstg Storage Temperature Range -65~200 UNIT V V V A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.
94 ℃/W BDX63/A/B/C isc website：www.
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