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BDX63A Datasheet PDF


Part Number BDX63A
Manufacturer Inchange Semiconductor
Title Silicon NPN Darlington Power Transistor
Description ·Collector Current -IC= 8A ·High DC Current Gain-hFE= 1000(Min)@ IC= 3A ·Complement to Type BDX62/A/B/C ·Minimum Lot-to-Lot variations for robust ...
Features & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor BDX63/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BDX63 VCEO(SUS) Collector-Emitter Sustaining Voltage BDX63A BDX63B IC= 50mA ;IB=0 BDX63C VCE(sat) Collector...

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BDX63 : BDX63 BDX63A BDX63B BDX63C MECHANICAL DATA Dimensions in mm NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR 9.0 max. 2. 5 26.6 max. 4.2 39.5 max. B 30.1 E 20.3 max. 1 .0 NPN epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications. 16.9 10.9 12.8 TO3 Package. Case connected to collector. PNP complements are: BDX62, BDX62A, BDX62B, BDX62C. ABSOLUTE MAXIMUM RATINGS (Tcase=25°C unless otherwise stated) BDX BDX BDX BDX 63 63A 63B 63C 60 80 100 120 80 5 ì ï ï VCEO VCBO VEBO IC ICM IB Ptot Tj Tstj Rth j-mb Semelab plc. Collector - emitter voltage (open base) Collector - base voltage (open emitter) Emitter - ba.

BDX63 : ·Collector Current -IC= 8A ·High DC Current Gain-hFE= 1000(Min)@ IC= 3A ·Complement to Type BDX62/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BDX63 80 VCBO Collector-Base Voltage BDX63A 100 BDX63B 120 BDX63C 140 BDX63 60 VCEO Collector-Emitter Voltage BDX63A 80 BDX63B 100 BDX63C 120 VEBO Emitter-Base Voltage 5 IC Collector Current-Continuous 8 ICM Collector Current-Peak 12 IB Base Current-Continuous 0.15 PC Collector Power Dissipation @ TC=25℃ 90 TJ Juncti.

BDX63 : BDX63 – A – B – C NPN SILICON DARLINGTON POWER TRANSISTOR The BDX63, BDX63A, BDX63 and BDX63C are mounted in TO-3 metal package. High current power darlingtons designed for power amplification and switching applications. The complementary PNP are BDX62, BDX62A, BDX62B, BDX62C. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings BDX63 BDX63A BDX63B BDX63C BDX63 BDX63A BDX63B BDX63C Value 60 80 100 120 80 100 120 140 5.0 8 12 0.15 90 -55 to +200 Unit VCEO Collector-Emitter Voltage V www.DataSheet.net/ VCEV VEBO IC IB PT TJ TS Collector-EmitterVoltage Emitter-Base Voltage Collector Current Base Current Power Dissipation Junction Temperature VBE=-1.5 V V V A A W °C IC(RMS) .

BDX63A : BDX63 BDX63A BDX63B BDX63C MECHANICAL DATA Dimensions in mm NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR 9.0 max. 2. 5 26.6 max. 4.2 39.5 max. B 30.1 E 20.3 max. 1 .0 NPN epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications. 16.9 10.9 12.8 TO3 Package. Case connected to collector. PNP complements are: BDX62, BDX62A, BDX62B, BDX62C. ABSOLUTE MAXIMUM RATINGS (Tcase=25°C unless otherwise stated) BDX BDX BDX BDX 63 63A 63B 63C 60 80 100 120 80 5 ì ï ï VCEO VCBO VEBO IC ICM IB Ptot Tj Tstj Rth j-mb Semelab plc. Collector - emitter voltage (open base) Collector - base voltage (open emitter) Emitter - ba.

BDX63A : BDX63 – A – B – C NPN SILICON DARLINGTON POWER TRANSISTOR The BDX63, BDX63A, BDX63 and BDX63C are mounted in TO-3 metal package. High current power darlingtons designed for power amplification and switching applications. The complementary PNP are BDX62, BDX62A, BDX62B, BDX62C. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings BDX63 BDX63A BDX63B BDX63C BDX63 BDX63A BDX63B BDX63C Value 60 80 100 120 80 100 120 140 5.0 8 12 0.15 90 -55 to +200 Unit VCEO Collector-Emitter Voltage V www.DataSheet.net/ VCEV VEBO IC IB PT TJ TS Collector-EmitterVoltage Emitter-Base Voltage Collector Current Base Current Power Dissipation Junction Temperature VBE=-1.5 V V V A A W °C IC(RMS) .

BDX63B : BDX63 BDX63A BDX63B BDX63C MECHANICAL DATA Dimensions in mm NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR 9.0 max. 2. 5 26.6 max. 4.2 39.5 max. B 30.1 E 20.3 max. 1 .0 NPN epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications. 16.9 10.9 12.8 TO3 Package. Case connected to collector. PNP complements are: BDX62, BDX62A, BDX62B, BDX62C. ABSOLUTE MAXIMUM RATINGS (Tcase=25°C unless otherwise stated) BDX BDX BDX BDX 63 63A 63B 63C 60 80 100 120 80 5 ì ï ï VCEO VCBO VEBO IC ICM IB Ptot Tj Tstj Rth j-mb Semelab plc. Collector - emitter voltage (open base) Collector - base voltage (open emitter) Emitter - ba.

BDX63B : ·Collector Current -IC= 8A ·High DC Current Gain-hFE= 1000(Min)@ IC= 3A ·Complement to Type BDX62/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BDX63 80 VCBO Collector-Base Voltage BDX63A 100 BDX63B 120 BDX63C 140 BDX63 60 VCEO Collector-Emitter Voltage BDX63A 80 BDX63B 100 BDX63C 120 VEBO Emitter-Base Voltage 5 IC Collector Current-Continuous 8 ICM Collector Current-Peak 12 IB Base Current-Continuous 0.15 PC Collector Power Dissipation @ TC=25℃ 90 TJ Juncti.

BDX63B : BDX63 – A – B – C NPN SILICON DARLINGTON POWER TRANSISTOR The BDX63, BDX63A, BDX63 and BDX63C are mounted in TO-3 metal package. High current power darlingtons designed for power amplification and switching applications. The complementary PNP are BDX62, BDX62A, BDX62B, BDX62C. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings BDX63 BDX63A BDX63B BDX63C BDX63 BDX63A BDX63B BDX63C Value 60 80 100 120 80 100 120 140 5.0 8 12 0.15 90 -55 to +200 Unit VCEO Collector-Emitter Voltage V www.DataSheet.net/ VCEV VEBO IC IB PT TJ TS Collector-EmitterVoltage Emitter-Base Voltage Collector Current Base Current Power Dissipation Junction Temperature VBE=-1.5 V V V A A W °C IC(RMS) .

BDX63C : BDX63 BDX63A BDX63B BDX63C MECHANICAL DATA Dimensions in mm NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR 9.0 max. 2. 5 26.6 max. 4.2 39.5 max. B 30.1 E 20.3 max. 1 .0 NPN epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications. 16.9 10.9 12.8 TO3 Package. Case connected to collector. PNP complements are: BDX62, BDX62A, BDX62B, BDX62C. ABSOLUTE MAXIMUM RATINGS (Tcase=25°C unless otherwise stated) BDX BDX BDX BDX 63 63A 63B 63C 60 80 100 120 80 5 ì ï ï VCEO VCBO VEBO IC ICM IB Ptot Tj Tstj Rth j-mb Semelab plc. Collector - emitter voltage (open base) Collector - base voltage (open emitter) Emitter - ba.

BDX63C : ·Collector Current -IC= 8A ·High DC Current Gain-hFE= 1000(Min)@ IC= 3A ·Complement to Type BDX62/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BDX63 80 VCBO Collector-Base Voltage BDX63A 100 BDX63B 120 BDX63C 140 BDX63 60 VCEO Collector-Emitter Voltage BDX63A 80 BDX63B 100 BDX63C 120 VEBO Emitter-Base Voltage 5 IC Collector Current-Continuous 8 ICM Collector Current-Peak 12 IB Base Current-Continuous 0.15 PC Collector Power Dissipation @ TC=25℃ 90 TJ Juncti.

BDX63C : BDX63 – A – B – C NPN SILICON DARLINGTON POWER TRANSISTOR The BDX63, BDX63A, BDX63 and BDX63C are mounted in TO-3 metal package. High current power darlingtons designed for power amplification and switching applications. The complementary PNP are BDX62, BDX62A, BDX62B, BDX62C. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings BDX63 BDX63A BDX63B BDX63C BDX63 BDX63A BDX63B BDX63C Value 60 80 100 120 80 100 120 140 5.0 8 12 0.15 90 -55 to +200 Unit VCEO Collector-Emitter Voltage V www.DataSheet.net/ VCEV VEBO IC IB PT TJ TS Collector-EmitterVoltage Emitter-Base Voltage Collector Current Base Current Power Dissipation Junction Temperature VBE=-1.5 V V V A A W °C IC(RMS) .




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