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BDX67B

Part Number BDX67B
Manufacturer Comset Semiconductors
Title NPN SILICON DARLINGTONS POWER TRANSISTOR
Description BDX67 – A – B – C NPN SILICON DARLINGTON POWER TRANSISTOR The BDX67, BDX67A, BDX67 and BDX67C are mounted in TO-3 metal package. High current powe...
Features RISTICS Symbol Ratings BDX67 BDX67A BDX67B BDX67C Value Unit RthJ-C Thermal Resistance, Junction to Case 1.17 °C/W ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) BDX67 Min 60 80 100 120 - Typ - Max - Unit VCEO(SUS) Collector-Emitter Breakdo...

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BDX67 : BDX67 BDX67A BDX67B BDX67C MECHANICAL DATA Dimensions in mm NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR 9.0 max. 2. 5 26.6 max. 4.2 39.5 max. B 30.1 E 20.3 max. 1 .0 NPN epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications. 16.9 10.9 12.8 PNP complements are: BDX66, BDX66A, BDX66B, BDX66C. TO3 Package. Case connected to collector. ABSOLUTE MAXIMUM RATINGS (Tcase=25°C unless otherwise stated) BDX BDX BDX BDX 67 67A 67B 67C 60 80 100 120 V 80 ì ï VCEO VCBO VEBO IC ICM IB Ptot Tj Tstj Rth j-mb Semelab plc. Collector - emitter voltage (open base) Collector - base voltage (open emitter) Emitter - base.

BDX67 : ·With TO-3 package ·High current capability ·DARLINGTON APPLICATIONS ·Designed for power amplification and switching application. PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current(peak) Base current Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 80 60 5 16 20 0.25 117 150 -55~200 UNIT V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance f.

BDX67 : BDX67 – A – B – C NPN SILICON DARLINGTON POWER TRANSISTOR The BDX67, BDX67A, BDX67 and BDX67C are mounted in TO-3 metal package. High current power darlingtons designed for power amplification and switching applications. The complementary PNP are BDX66, BDX66A, BDX66B, BDX66C. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings BDX67 BDX67A BDX67B BDX67C BDX67 BDX67A BDX67B BDX67C BDX67 BDX67A BDX67B BDX67C BDX67 BDX67A BDX67B BDX67C BDX67 BDX67A BDX67B BDX67C BDX67 BDX67A BDX67B BDX67C BDX67 BDX67A BDX67B BDX67C Value 60 80 100 120 80 100 120 140 5.0 Unit VCEO Collector-Emitter Voltage V VCBO Collector-Base Voltage www.DataSheet.net/ V VEBO Emitter-Base Voltage V IC(RMS.

BDX67 : ·High DC Current Gain- : hFE= 1000(Min)@ IC= 10A ·Low Saturation Voltage ·Complement to Type BDX66/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BDX67 80 BDX67A 100 VCBO Collector-Base Voltage BDX67B 120 BDX67C 140 BDX67 60 BDX67A 80 VCEO Collector-Emitter Voltage BDX67B 100 BDX67C 120 VEBO Emitter-Base Voltage 5 IC Collector Current-Continuous 16 ICM Collector Current-Peak 20 IB Base Current 250 PC Collector Power Dissipation @ TC=25℃ 150 TJ Junction Tempera.

BDX67A : BDX67 BDX67A BDX67B BDX67C MECHANICAL DATA Dimensions in mm NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR 9.0 max. 2. 5 26.6 max. 4.2 39.5 max. B 30.1 E 20.3 max. 1 .0 NPN epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications. 16.9 10.9 12.8 PNP complements are: BDX66, BDX66A, BDX66B, BDX66C. TO3 Package. Case connected to collector. ABSOLUTE MAXIMUM RATINGS (Tcase=25°C unless otherwise stated) BDX BDX BDX BDX 67 67A 67B 67C 60 80 100 120 V 80 ì ï VCEO VCBO VEBO IC ICM IB Ptot Tj Tstj Rth j-mb Semelab plc. Collector - emitter voltage (open base) Collector - base voltage (open emitter) Emitter - base.

BDX67A : BDX67 – A – B – C NPN SILICON DARLINGTON POWER TRANSISTOR The BDX67, BDX67A, BDX67 and BDX67C are mounted in TO-3 metal package. High current power darlingtons designed for power amplification and switching applications. The complementary PNP are BDX66, BDX66A, BDX66B, BDX66C. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings BDX67 BDX67A BDX67B BDX67C BDX67 BDX67A BDX67B BDX67C BDX67 BDX67A BDX67B BDX67C BDX67 BDX67A BDX67B BDX67C BDX67 BDX67A BDX67B BDX67C BDX67 BDX67A BDX67B BDX67C BDX67 BDX67A BDX67B BDX67C Value 60 80 100 120 80 100 120 140 5.0 Unit VCEO Collector-Emitter Voltage V VCBO Collector-Base Voltage www.DataSheet.net/ V VEBO Emitter-Base Voltage V IC(RMS.

BDX67A : ·High DC Current Gain- : hFE= 1000(Min)@ IC= 10A ·Low Saturation Voltage ·Complement to Type BDX66/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BDX67 80 BDX67A 100 VCBO Collector-Base Voltage BDX67B 120 BDX67C 140 BDX67 60 BDX67A 80 VCEO Collector-Emitter Voltage BDX67B 100 BDX67C 120 VEBO Emitter-Base Voltage 5 IC Collector Current-Continuous 16 ICM Collector Current-Peak 20 IB Base Current 250 PC Collector Power Dissipation @ TC=25℃ 150 TJ Junction Tempera.

BDX67B : BDX67 BDX67A BDX67B BDX67C MECHANICAL DATA Dimensions in mm NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR 9.0 max. 2. 5 26.6 max. 4.2 39.5 max. B 30.1 E 20.3 max. 1 .0 NPN epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications. 16.9 10.9 12.8 PNP complements are: BDX66, BDX66A, BDX66B, BDX66C. TO3 Package. Case connected to collector. ABSOLUTE MAXIMUM RATINGS (Tcase=25°C unless otherwise stated) BDX BDX BDX BDX 67 67A 67B 67C 60 80 100 120 V 80 ì ï VCEO VCBO VEBO IC ICM IB Ptot Tj Tstj Rth j-mb Semelab plc. Collector - emitter voltage (open base) Collector - base voltage (open emitter) Emitter - base.

BDX67B : ·With TO-3 package ·High current capability ·DARLINGTON APPLICATIONS ·Designed for power amplification and switching application. PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current(peak) Base current Total power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 120 100 5 16 20 0.25 117 150 -55~200 UNIT V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance.

BDX67B : ·High DC Current Gain- : hFE= 1000(Min)@ IC= 10A ·Low Saturation Voltage ·Complement to Type BDX66/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BDX67 80 BDX67A 100 VCBO Collector-Base Voltage BDX67B 120 BDX67C 140 BDX67 60 BDX67A 80 VCEO Collector-Emitter Voltage BDX67B 100 BDX67C 120 VEBO Emitter-Base Voltage 5 IC Collector Current-Continuous 16 ICM Collector Current-Peak 20 IB Base Current 250 PC Collector Power Dissipation @ TC=25℃ 150 TJ Junction Tempera.

BDX67C : BDX67 BDX67A BDX67B BDX67C MECHANICAL DATA Dimensions in mm NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR 9.0 max. 2. 5 26.6 max. 4.2 39.5 max. B 30.1 E 20.3 max. 1 .0 NPN epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications. 16.9 10.9 12.8 PNP complements are: BDX66, BDX66A, BDX66B, BDX66C. TO3 Package. Case connected to collector. ABSOLUTE MAXIMUM RATINGS (Tcase=25°C unless otherwise stated) BDX BDX BDX BDX 67 67A 67B 67C 60 80 100 120 V 80 ì ï VCEO VCBO VEBO IC ICM IB Ptot Tj Tstj Rth j-mb Semelab plc. Collector - emitter voltage (open base) Collector - base voltage (open emitter) Emitter - base.

BDX67C : ·High DC Current Gain- : hFE= 1000(Min)@ IC= 10A ·Low Saturation Voltage ·Complement to Type BDX66/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BDX67 80 BDX67A 100 VCBO Collector-Base Voltage BDX67B 120 BDX67C 140 BDX67 60 BDX67A 80 VCEO Collector-Emitter Voltage BDX67B 100 BDX67C 120 VEBO Emitter-Base Voltage 5 IC Collector Current-Continuous 16 ICM Collector Current-Peak 20 IB Base Current 250 PC Collector Power Dissipation @ TC=25℃ 150 TJ Junction Tempera.

BDX67C : ·With TO-3 package ·High current capability ·DARLINGTON APPLICATIONS ·Designed for power amplification and switching application. PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current(peak) Base current Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 140 120 5 16 20 0.25 117 150 -55~200 UNIT V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance.

BDX67C : BDX67 – A – B – C NPN SILICON DARLINGTON POWER TRANSISTOR The BDX67, BDX67A, BDX67 and BDX67C are mounted in TO-3 metal package. High current power darlingtons designed for power amplification and switching applications. The complementary PNP are BDX66, BDX66A, BDX66B, BDX66C. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings BDX67 BDX67A BDX67B BDX67C BDX67 BDX67A BDX67B BDX67C BDX67 BDX67A BDX67B BDX67C BDX67 BDX67A BDX67B BDX67C BDX67 BDX67A BDX67B BDX67C BDX67 BDX67A BDX67B BDX67C BDX67 BDX67A BDX67B BDX67C Value 60 80 100 120 80 100 120 140 5.0 Unit VCEO Collector-Emitter Voltage V VCBO Collector-Base Voltage www.DataSheet.net/ V VEBO Emitter-Base Voltage V IC(RMS.




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