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BT138-600

Comset Semiconductors
Part Number BT138-600
Manufacturer Comset Semiconductors
Description TRIACS
Published Dec 12, 2012
Detailed Description SEMICONDUCTORS BT138 Series TRIACS FEATURE Glass passivated triacs in a plastic TO220 package. They are intended for u...
Datasheet PDF File BT138-600 PDF File

BT138-600
BT138-600

Overview
SEMICONDUCTORS BT138 Series TRIACS FEATURE Glass passivated triacs in a plastic TO220 package.
They are intended for use in applications requiring high bidirectional transient and blocking voltage capability and high thermal cycling performance.
Typical applications include motor control, industrial and domestic lighting, heating and static switching.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS Value http://www.
DataSheet4U.
net/ Symbol Ratings Repetitive peak off-state voltage Repetitive peak reverse voltage RMS on-state current Non-repetitive peak on-state current Peak gate power Average gate power Storage temperature range Operating junction temperature Unit BT138-500 BT138-600 BT138-800 VDRM VRRM IT(RMS) ITSM PGM PG(AV) Tstg Tj 500 500 600 600 12 95 5 0.
5 -45 to +150 110 800 V 800 A A W W °C °C THERMAL CHARACTERISTICS Symbol R∂j-mb R∂JA Ratings Thermal resistance junction to mounting base Thermal resistance junction to ambient Value ≤ 1.
5 ≤ 60 Unit °C/W 26/09/2012 COMSET SEMICONDUCTORS 1|3 datasheet pdf - http://www.
DataSheet4U.
net/ SEMICONDUCTORS BT138 Series ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol VDRM VRRM Ratings Repetitive peak off-state voltage Repetitive peak reverse voltage Gate trigger current Test Condition(s) BT137-500 ID = 0.
1 mA BT137-600 BT137-800 BT137-500 ID = 0.
5 mA BT137-600 BT137-800 T2+ G+ VD = 12 V T2+ GRL = 100 Ω T2- GT2- G+ T2+ G+ VD = 12 V T2+ GRL = 100 Ω T2- GT2- G+ T2+ G+ T2+ GVD = 12 V IGT = 100 mA T2- GT2- G+ http://www.
DataSheet4U.
net/ Min 500 600 800 500 600 800 100 Typ 250 Max 30 30 30 100 1.
5 1.
5 1.
5 1.
8 60 90 60 90 50 0.
5 1.
7 - Unit V IGT mA VGT Gate trigger voltage V IL IH ID VT dVD/dt Latching current Holding current Off-state leakage current On-state voltage Critical rate of rise of off-state voltage Critical rate of rise of change commutatating current Gate controlled turn-on time mA mA mA V V/µs IT = 200 mA, IGT = 50 mA VD = VDRM max Tj = 125°C IT = 15 A VDM = 67% VDR...


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