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TIC116D


Part Number TIC116D
Manufacturer Comset Semiconductors
Title P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTOR
Description SEMICONDUCTORS TIC116A, TIC116B, TIC116C, TIC116D, TIC116E, TIC116M, TIC116N, TIC116S P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS • • • • ...
Features E 100 200 300 400 500 600 700 800 100 200 300 400 500 600 700 800 8 5 80 3 5 1 -40 to +110 -40 to +125 230 29/10/2012 COMSET SEMICONDUCTORS 1|4 datasheet pdf - http://www.DataSheet4U.net/ SEMICONDUCTORS TIC116A, TIC116B, TIC116C, TIC116D, TIC116E, TIC116M, TIC116N, TIC116S THERMAL CHARACTER...

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TIC116 : TIC116 SERIES SILICON CONTROLLED RECTIFIERS Copyright © 2000, Power Innovations Limited, UK APRIL 1971 - REVISED JUNE 2000 G G G G G 8 A Continuous On-State Current 80 A Surge-Current Glass Passivated Wafer 400 V to 800 V Off-State Voltage Max IGT of 20 mA K A G 1 2 3 TO-220 PACKAGE (TOP VIEW) Pin 2 is in electrical contact with the mounting base. MDC1ACA absolute maximum ratings over operating case temperature (unless otherwise noted) RATING TIC116D Repetitive peak off-state voltage TIC116M TIC116S TIC116N TIC116D Repetitive peak reverse voltage TIC116M TIC116S TIC116N Continuous on-state current at (or below) 70°C case temperature (see Note 1) Average on-state current (180° conduction .

TIC116A : SEMICONDUCTORS TIC116A, TIC116B, TIC116C, TIC116D, TIC116E, TIC116M, TIC116N, TIC116S P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS • • • • • • 8 A Continuous On-State Current 80 A Surge-Current Glass Passivated Wafer 100 V to 800 V Off-State Voltage Max IGT of 20 mA Compliance to ROHS ABSOLUTE MAXIMUM RATINGS Value http://www.DataSheet4U.net/ Symbol VDRM VRRM IT(RMS) IT(AV) ITM IGM PGM PG(AV) TC Tstg TL Ratings A B C Repetitive peak off-state voltage (see Note1) Repetitive peak reverse voltage Continuous on-state current at (or below) 70°C case temperature (see note2) Average on-state current (180° conduction angle) at(or below) 70°C case temperature (see Note3) Surge on-state curr.

TIC116B : SEMICONDUCTORS TIC116A, TIC116B, TIC116C, TIC116D, TIC116E, TIC116M, TIC116N, TIC116S P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS • • • • • • 8 A Continuous On-State Current 80 A Surge-Current Glass Passivated Wafer 100 V to 800 V Off-State Voltage Max IGT of 20 mA Compliance to ROHS ABSOLUTE MAXIMUM RATINGS Value http://www.DataSheet4U.net/ Symbol VDRM VRRM IT(RMS) IT(AV) ITM IGM PGM PG(AV) TC Tstg TL Ratings A B C Repetitive peak off-state voltage (see Note1) Repetitive peak reverse voltage Continuous on-state current at (or below) 70°C case temperature (see note2) Average on-state current (180° conduction angle) at(or below) 70°C case temperature (see Note3) Surge on-state curr.

TIC116C : SEMICONDUCTORS TIC116A, TIC116B, TIC116C, TIC116D, TIC116E, TIC116M, TIC116N, TIC116S P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS • • • • • • 8 A Continuous On-State Current 80 A Surge-Current Glass Passivated Wafer 100 V to 800 V Off-State Voltage Max IGT of 20 mA Compliance to ROHS ABSOLUTE MAXIMUM RATINGS Value http://www.DataSheet4U.net/ Symbol VDRM VRRM IT(RMS) IT(AV) ITM IGM PGM PG(AV) TC Tstg TL Ratings A B C Repetitive peak off-state voltage (see Note1) Repetitive peak reverse voltage Continuous on-state current at (or below) 70°C case temperature (see note2) Average on-state current (180° conduction angle) at(or below) 70°C case temperature (see Note3) Surge on-state curr.

TIC116D : isc Thyristors TIC116D APPLICATIONS ·8A contimunous on-state current ·80A surge-current ·Glass passivated ·Max IGT of 20mA ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDRM Repetitive peak off-state voltage VRRM Repetitive peak reverse voltage IT(AV) On-state current Tc=80℃ IT(RMS) RMS on-state current Tc=80℃ ITM Surge peak on-state current PGM Peak gate power PW≤300μs PG(AV) Average gate power Tj Operating Junction temperature Tstg Storage temperature Rth(j-c) Thermal resistance, junction to case Rth(j-a) Thermal resistance, junction to ambient MIN 400 400 5 8 80.

TIC116D : ® Jinglin Qidong Jilai Electronics Co., Ltd. SEMICONDUCTOR TECHNICAL DATA TIC116 Series(8A SCRS) TIC116 series 8A Continuous On-State Current 400V to 800V Off-State Voltage Max IGT of 20mA TO-220 PACKAGE ABSOLUTE RATING Symbol Parameter VDRM Repetitive peak off-state voltage TIC116D TIC116M TIC116S TIC116N VRRM Repetitive peak raverse voltage TIC116D TIC116M TIC116S TIC116N Continuous on-state current at(or below) 80 IT(RMS) case temperature Average on-state current(180 conduction IT(AV) angle) at (or below) 80 case temperature ITM IGM PGM PG(AV) TC Tstg Surge on-state current Peak positive gate current(pulse width 300 s) Peak gate power dissipation(pulse width 300 s) Average g.

TIC116E : SEMICONDUCTORS TIC116A, TIC116B, TIC116C, TIC116D, TIC116E, TIC116M, TIC116N, TIC116S P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS • • • • • • 8 A Continuous On-State Current 80 A Surge-Current Glass Passivated Wafer 100 V to 800 V Off-State Voltage Max IGT of 20 mA Compliance to ROHS ABSOLUTE MAXIMUM RATINGS Value http://www.DataSheet4U.net/ Symbol VDRM VRRM IT(RMS) IT(AV) ITM IGM PGM PG(AV) TC Tstg TL Ratings A B C Repetitive peak off-state voltage (see Note1) Repetitive peak reverse voltage Continuous on-state current at (or below) 70°C case temperature (see note2) Average on-state current (180° conduction angle) at(or below) 70°C case temperature (see Note3) Surge on-state curr.

TIC116M : ·8A contimunous on-state current ·80A surge-current ·Glass passivated Wafer ·400V to 800V off-state Voltage ·Max IGT of 20mA ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT TIC116D 400 VDRM Repetitive voltage peakoff-state TIC116M TIC116S 600 700 V TIC116N 800 TIC116D 400 VRRM Repetitive voltage peakreverse TIC116M TIC116S 600 700 V TIC116N 800 IT(AV) IT(RMS) ITM PGM PG(AV) Tj Tstg On-state current Tc=70℃ RMS on-state current Tc=70℃ Surge peak on-state current Peak gate power PW≤300μs Average gate power Operating Junction temperature Storage tempera.

TIC116M : SEMICONDUCTORS TIC116A, TIC116B, TIC116C, TIC116D, TIC116E, TIC116M, TIC116N, TIC116S P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS • • • • • • 8 A Continuous On-State Current 80 A Surge-Current Glass Passivated Wafer 100 V to 800 V Off-State Voltage Max IGT of 20 mA Compliance to ROHS ABSOLUTE MAXIMUM RATINGS Value http://www.DataSheet4U.net/ Symbol VDRM VRRM IT(RMS) IT(AV) ITM IGM PGM PG(AV) TC Tstg TL Ratings A B C Repetitive peak off-state voltage (see Note1) Repetitive peak reverse voltage Continuous on-state current at (or below) 70°C case temperature (see note2) Average on-state current (180° conduction angle) at(or below) 70°C case temperature (see Note3) Surge on-state curr.

TIC116M : ® Jinglin Qidong Jilai Electronics Co., Ltd. SEMICONDUCTOR TECHNICAL DATA TIC116 Series(8A SCRS) TIC116 series 8A Continuous On-State Current 400V to 800V Off-State Voltage Max IGT of 20mA TO-220 PACKAGE ABSOLUTE RATING Symbol Parameter VDRM Repetitive peak off-state voltage TIC116D TIC116M TIC116S TIC116N VRRM Repetitive peak raverse voltage TIC116D TIC116M TIC116S TIC116N Continuous on-state current at(or below) 80 IT(RMS) case temperature Average on-state current(180 conduction IT(AV) angle) at (or below) 80 case temperature ITM IGM PGM PG(AV) TC Tstg Surge on-state current Peak positive gate current(pulse width 300 s) Peak gate power dissipation(pulse width 300 s) Average g.

TIC116N : SEMICONDUCTORS TIC116A, TIC116B, TIC116C, TIC116D, TIC116E, TIC116M, TIC116N, TIC116S P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS • • • • • • 8 A Continuous On-State Current 80 A Surge-Current Glass Passivated Wafer 100 V to 800 V Off-State Voltage Max IGT of 20 mA Compliance to ROHS ABSOLUTE MAXIMUM RATINGS Value http://www.DataSheet4U.net/ Symbol VDRM VRRM IT(RMS) IT(AV) ITM IGM PGM PG(AV) TC Tstg TL Ratings A B C Repetitive peak off-state voltage (see Note1) Repetitive peak reverse voltage Continuous on-state current at (or below) 70°C case temperature (see note2) Average on-state current (180° conduction angle) at(or below) 70°C case temperature (see Note3) Surge on-state curr.

TIC116N : ® Jinglin Qidong Jilai Electronics Co., Ltd. SEMICONDUCTOR TECHNICAL DATA TIC116 Series(8A SCRS) TIC116 series 8A Continuous On-State Current 400V to 800V Off-State Voltage Max IGT of 20mA TO-220 PACKAGE ABSOLUTE RATING Symbol Parameter VDRM Repetitive peak off-state voltage TIC116D TIC116M TIC116S TIC116N VRRM Repetitive peak raverse voltage TIC116D TIC116M TIC116S TIC116N Continuous on-state current at(or below) 80 IT(RMS) case temperature Average on-state current(180 conduction IT(AV) angle) at (or below) 80 case temperature ITM IGM PGM PG(AV) TC Tstg Surge on-state current Peak positive gate current(pulse width 300 s) Peak gate power dissipation(pulse width 300 s) Average g.

TIC116N : isc Thyristors TIC116N APPLICATIONS ·5A contimunous on-state current ·Glass passivated ·Max IGT of 20uA ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MIN UNIT VDRM Repetitive peak off-state voltage 800 V VRRM Repetitive peak reverse voltage 800 V IT(AV) On-state current Tc=80℃ 5 A ITSM Surge non-repetitive on-state current TP=10ms 80 A PGM Peak gate power PW≤300μs 5 W PG(AV) Average gate power 1 W Tj Operating Junction temperature -40 ~+125 ℃ Tstg Storage temperature -40 ~+150 ℃ Rth(j-c) Thermal resistance, junction to case 1.5 ℃/W Rth(j-a) Thermal resistance, junction to ambient 60 ℃/W ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified.

TIC116S : SEMICONDUCTORS TIC116A, TIC116B, TIC116C, TIC116D, TIC116E, TIC116M, TIC116N, TIC116S P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS • • • • • • 8 A Continuous On-State Current 80 A Surge-Current Glass Passivated Wafer 100 V to 800 V Off-State Voltage Max IGT of 20 mA Compliance to ROHS ABSOLUTE MAXIMUM RATINGS Value http://www.DataSheet4U.net/ Symbol VDRM VRRM IT(RMS) IT(AV) ITM IGM PGM PG(AV) TC Tstg TL Ratings A B C Repetitive peak off-state voltage (see Note1) Repetitive peak reverse voltage Continuous on-state current at (or below) 70°C case temperature (see note2) Average on-state current (180° conduction angle) at(or below) 70°C case temperature (see Note3) Surge on-state curr.

TIC116S : ·8A contimunous on-state current ·80A surge-current ·Glass passivated Wafer ·400V to 800V off-state Voltage ·Max IGT of 20mA ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT TIC116D 400 VDRM Repetitive voltage peakoff-state TIC116M TIC116S 600 700 V TIC116N 800 TIC116D 400 VRRM Repetitive voltage peakreverse TIC116M TIC116S 600 700 V TIC116N 800 IT(AV) IT(RMS) ITM PGM PG(AV) Tj Tstg On-state current Tc=70℃ RMS on-state current Tc=70℃ Surge peak on-state current Peak gate power PW≤300μs Average gate power Operating Junction temperature Storage tempera.

TIC116S : ® Jinglin Qidong Jilai Electronics Co., Ltd. SEMICONDUCTOR TECHNICAL DATA TIC116 Series(8A SCRS) TIC116 series 8A Continuous On-State Current 400V to 800V Off-State Voltage Max IGT of 20mA TO-220 PACKAGE ABSOLUTE RATING Symbol Parameter VDRM Repetitive peak off-state voltage TIC116D TIC116M TIC116S TIC116N VRRM Repetitive peak raverse voltage TIC116D TIC116M TIC116S TIC116N Continuous on-state current at(or below) 80 IT(RMS) case temperature Average on-state current(180 conduction IT(AV) angle) at (or below) 80 case temperature ITM IGM PGM PG(AV) TC Tstg Surge on-state current Peak positive gate current(pulse width 300 s) Peak gate power dissipation(pulse width 300 s) Average g.




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