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TIC206N

Comset Semiconductors
Part Number TIC206N
Manufacturer Comset Semiconductors
Description (TIC206x) SILICON BIDIRECTIONAL TRIODE THYRISTOR
Published Dec 12, 2012
Detailed Description SEMICONDUCTORS TIC206A, TIC206B, TIC206D, TIC206M, TIC206N, TIC206S SILICON BIDIRECTIONAL TRIODE THYRISTOR • • • • • • ...
Datasheet PDF File TIC206N PDF File

TIC206N
TIC206N

Overview
SEMICONDUCTORS TIC206A, TIC206B, TIC206D, TIC206M, TIC206N, TIC206S SILICON BIDIRECTIONAL TRIODE THYRISTOR • • • • • • 4 A RMS Glass Passivated Wafer 100 V to 800 V Off-State Voltage Max IGT of 5 mA (Quadrants 1-3) Sensitive gate triacs Compliance to ROHS DESCRIPTION This device is a bidirectional triode thyristor (triac) which may be triggered from the off-state to the on-state by either polarity of gate signal with main Terminal 2 at either polarity.
ABSOLUTE MAXIMUM RATINGS http://www.
DataSheet4U.
net/ Symbol VDRM IT(RMS) ITSM ITSM IGM PGM PG(AV) TC Tstg TL Ratings A Repetitive peak off-state voltage (see Note1) Full-cycle RMS on-state current at (or below) 70°C case temperature (see note2) Peak on-state surge current full-sine-wave (see Note3) Peak on-state surge current half-sine-wave (see Note4) Peak gate current Peak gate power dissipation at (or below) 85°C case temperature (pulse width ≤200 µs) Average gate power dissipation at (or below) 85°C case (see Note5) Operating ca...


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