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2N6306

Part Number	2N6306
Manufacturer	Microsemi Corporation
Description	NPN POWER SILICON TRANSISTOR
Published	Mar 22, 2005
Detailed Description	TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/498 Devices 2N6306 2N6308 Qualified Level JAN JA...
Datasheet	2N6306 PDF File

Overview

TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/498 Devices 2N6306 2N6308 Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Base Current Total Power Dissipation 2N6306 2N6308 250 350 500 700 8.
0 8.
0 4.
0 @ TC = +250C (1) 125 PT @ TC = +1000C (1) 62.
5 Operating & Storage Temperature Range -65 to +200 Top, Tstg 1) Between TC = +250C and TC = +1750C, linear derating factor average = 0.
833 W/0C VCEO VCBO VEBO IC IB Symbol Units Vdc Vdc Vdc Adc Adc W W 0 C TO-3 (TO-204AA)* *See Appendix A for Package Outline ELECTRICAL CHARACTERISTICS Characteristics Symbol Min.
Max.
Unit O...

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