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SSA-005-2

Bedford Opto Technology
Part Number SSA-005-2
Manufacturer Bedford Opto Technology
Description Miniature IR
Published Jan 17, 2013
Detailed Description These components are RoHS compliant Pb SSA-005-2 Miniature IR Array SSA-005-2 is an eight element array of silicon ph...
Datasheet PDF File SSA-005-2 PDF File

SSA-005-2
SSA-005-2

Overview
These components are RoHS compliant Pb SSA-005-2 Miniature IR Array SSA-005-2 is an eight element array of silicon phototransistors or gallium arsenide infrared emitters in a polycarbonate housing.
It is supplied with either wide angle flat-lensed or narrow angle components.
All leads fit an 0.
1” inch matrix.
• Very compact 8-element arrays with a double row of leads on an 0.
1” matrix.
• End stackable.
• No dust traps to reduce opto performance.
• Smooth black polycarbonate housing transmits infrared but reduces daylight influence.
MECHANICAL 7.
0 http://www.
DataSheet4U.
net/ 20.
2 +0.
0/-0.
2 6.
0 3.
5 LEADS 0.
5 SQUARE 7 x 2.
54 = 17.
78 2.
54 1.
21 PIPS IDENTIFY NEGATIVE LEADS ORDERING INFORMATION FLAT LENS PHOTOTRANSISTOR=SSA005-2A DOME LENS PHOTOTRANSISTIR=SSA005-2B FLAT LENS INFRARED EMITTER=SSA005-2C DOME LENS INFRARED EMITTER=SSA005-2D PLEASE NOTE CAN BE SUPPLIED IN LESS THAN 8 WAY VERSIONS ON REQUEST WITH COUPLED PAIR SPECIFICATION.
BEDFORD OPTO TECHNOLOGY LTD 1,BIGGAR BUSINESS PARK, BIGGAR, LANARKSHIRE,ML12 6NR Tel: +44 (0) 1899 221221 Fax: +44 (0) 1899 221009 Website: bot.
co.
uk E-mail: bill@bot.
co.
uk ISS C 23.
8.
07 datasheet pdf - http://www.
DataSheet4U.
net/ SOLDERING TEMPERATURE (3secs max 2mm from body) ALL TYPES 260 OC max SSA-005-2 INFRARED DIODES IR-Emitting Diodes in Miniature (T-3/4) Package PARAMETER Viewing Angle Peak Wavelength Power Dissipation Thermal Resistance Junction/Ambient Forward Current Rise Time Fall Time Junction Temperature Storage Temperature Range Radiant Intensity CQY 36N CQY 37N IF=50mA, tp<20ns IF=1.
5A, tp/T=0.
01, tp<10μs IF=1.
5A, tp/T=0.
01, tp<10μs CQY 36N CQY 37N CONDITIONS SYMBOL ϕ λp Pv RthJA IF Tr Tf Tj Tstg Ie VALUE +55° 950nm 170mW 450K/W 100mA 400ns 450ns 100°C -25…+100°C Min = 0.
7mW/sr Typ = 1.
5mW/sr Min = 2.
2mW/sr PHOTO DETECTORS Silicon -NPN - Phototransistors PARAMETER Viewing Angle Peak Wavelength Thermal Resistance Junction/Ambient Forward Current Rise Time Fall Time Junction Temperature Storage Temperature Ran...


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