DatasheetsPDF.com

2N6438

ON Semiconductor
Part Number 2N6438
Manufacturer ON Semiconductor
Description POWER TRANSISTORS
Published Mar 22, 2005
Detailed Description MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N6437/D High-Power PNP Silicon Transistors . . . design...
Datasheet PDF File 2N6438 PDF File

2N6438
2N6438


Overview
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N6437/D High-Power PNP Silicon Transistors .
.
.
designed for use in industrial–military power amplifier and switching circuit applications.
• High Collector–Emitter Sustaining Voltage — VCEO(sus) = 100 Vdc (Min) — 2N6437 VCEO(sus) = 120 Vdc (Min) — 2N6438 • High DC Current Gain — hFE = 20–80 @IC = 10 Adc hFE = 12 (Min) @ IC = 25 Adc • Low Collector–Emitter Saturation Voltage — VCE(sat) = 1.
0 Vdc (Max) @ IC = 10 Adc • Fast Switching Times @ IC = 10 Adc tr = 0.
3 µs (Max) ts = 1.
0 µs (Max) tf = 0.
25 µs (Max) • Complement to NPN 2N6339 thru 2N6341 MAXIMUM RATINGS (1) Rating Collector–Base Voltage Emitter–Base Voltage 2N6437 2N6438* *Motorola Preferred Device 25 AMPERE POWER TRANSISTORS PNP SILICON 100, 120 VOLTS 200 WATTS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ Symbol VCB VCEO VEB IC IB PD 2N6437 120 100 2N6438 140 120 Unit Vdc Vdc Vdc Adc Adc Collector–Emitter Voltage 6.
0 25 50 10 Collector Current — Continuous Peak Base Current Total Device Dissipation @ TC = 25_C Derate above 25_C Operating and Storage Junction Temperature Range 200 1.
14 Watts W/_C TJ,Tstg – 65 to + 200 CASE 1–07 TO–204AA (TO–3) _C THERMAL CHARACTERISTICS Characteristic Symbol RθJC Max Unit Thermal Resistance, Junction to Case 0.
875 _C/W (1) Indicates JEDEC Registered Data.
200 PD, POWER DISSIPATION (WATTS) 175 150 125 100 75 50 25 0 0 25 50 75 100 125 150 175 200 TC, CASE TEMPERATURE (°C) Figure 1.
Power Derating Preferred devices are Motorola recommended choices fo...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)