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SSM60T03GH

Silicon Standard
Part Number SSM60T03GH
Manufacturer Silicon Standard
Description N-channel Enhancement-mode Power MOSFET
Published Mar 26, 2013
Detailed Description SSM60T03GH,J N-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY BVDSS R DS(ON) ID DESCRIPTION The SSM60T03 acheive...
Datasheet PDF File SSM60T03GH PDF File

SSM60T03GH
SSM60T03GH

Overview
SSM60T03GH,J N-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY BVDSS R DS(ON) ID DESCRIPTION The SSM60T03 acheives fast switching performance with low gate charge without a complex drive circuit.
It is suitable for low voltage applications such as DC/DC converters and general load-switching circuits.
The SSM60T03GH is in a TO-252 package, which is widely used for commercial and industrial surface-mount applications.
The through-hole version, the SSM60T03GJ in TO-251, is available for vertical mounting, where a small footprint is required on the board, and/or an external heatsink is to be attached.
These devices are manufactured with an advanced process, providing improved on-resistance and switching performance.
The devices have a maximum junction temperature rating of 175°C for improved thermal margin and reliability.
30V 12mΩ 45A Pb-free; RoHS-compliant TO-251 (IPAK) and TO-252 (DPAK) G G D S D S TO-251 (suffix J) TO-252 (suffix H) ABSOLUTE MAXIMUM RATINGS Symbol VDS VGS ID IDM PD EAS TSTG TJ Parameter Drain-source voltage Gate-source voltage Continuous drain current, TC = 25°C TC = 100°C Pulsed drain current 1 http://www.
DataSheet4U.
net/ Value 30 ±20 45 32 120 44 0.
352 3 Units V V A A A W W/°C mJ °C °C Total power dissipation, TC = 25°C Linear derating factor Single pulse avalanche energy Storage temperature range Operating junction temperature range 29 -55 to 175 -55 to 175 THERMAL CHARACTERISTICS Symbol RΘ JC RΘ JA Parameter Maximum thermal resistance, junction-case Maximum thermal resistance, junction-ambient Value 3.
4 110 Units °C/W °C/W Notes: 1.
Pulse width must be limited to avoid exceeding the safe operating area.
2.
Pulse width <300us, duty cycle <2%.
3.
VDD=25V , L=100uH , RG=25Ω , IAS=24A.
10/16/2005 Rev.
3.
1 www.
SiliconStandard.
com 1 of 5 datasheet pdf - http://www.
DataSheet4U.
net/ SSM60T03GH,J ELECTRICAL CHARACTERISTICS Symbol BVDSS Parameter Drain-source breakdown voltage Breakdown voltage temperature coefficient (at Tj = 25°...


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