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IFR740

Vishay
Part Number IFR740
Manufacturer Vishay
Description Power MOSFET
Published Apr 3, 2013
Detailed Description IRF740, SiHF740 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Conf...
Datasheet PDF File IFR740 PDF File

IFR740
IFR740

Overview
IRF740, SiHF740 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.
) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 63 9.
0 32 Single D FEATURES 400 0.
55 • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC Available RoHS* COMPLIANT DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.
The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.
TO-220AB G G D S S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb TO-220AB IRF740PbF SiHF740-E3 IRF740 SiHF740 http://www.
DataSheet4U.
net/ ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Mounting Torque for 10 s 6-32 or M3 screw TC = 25 °C EAS IAR EAR PD dV/dt TJ, Tstg VGS at 10 V TC = 25 °C TC = 100 °C SYMBOL VDS VGS ID IDM LIMIT 400 ± 20 10 6.
3 40 1.
0 520 10 13 125 4.
0 - 55 to + 150 300d 10 1.
1 W/°C mJ A mJ W V/ns °C lbf · in N·m A UNIT V Notes a.
Repetitive rating; pulse width limited by maximum junction temperature (see fig.
11).
b.
VDD = 50 V, starting TJ = 25 °C, L = 9.
1 mH, Rg = 25 Ω, IAS = 10 A (see fig.
12).
c.
ISD ≤ 10 A, dI/dt ≤ 120 A/μs, VDD ≤ VDS, TJ ≤ 150 °C.
d.
1.
6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply Doc...


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