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AP6902AGH-HF

Advanced Power Electronics
Part Number AP6902AGH-HF
Manufacturer Advanced Power Electronics
Description Dual N-Channel MOSFET
Published Apr 4, 2013
Detailed Description AP6902AGH-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Fast Switching Performa...
Datasheet PDF File AP6902AGH-HF PDF File

AP6902AGH-HF
AP6902AGH-HF

Overview
AP6902AGH-HF Halogen-Free Product Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Fast Switching Performance ▼ Two Independent Device ▼ Halogen Free & RoHS Compliant S1 G1 S2 G2 DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET D1 (TAB1) D2 (TAB2) BVDSS RDS(ON) ID 30V 9.
2mΩ 52A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
SDPAKTM used APEC innovated package and provides two independent device that is suitable and optimum for DC/DC power application.
SDPAKTM D1 D2 G1 S1 G2 S2 http://www.
DataSheet4U.
net/ Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 30 +20 52 13.
8 11 50 3 -55 to 150 -55 to 150 Units V V A A A A W ℃ ℃ Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient 3 Value 3 42 Unit ℃/W ℃/W 1 201303041 datasheet pdf - http://www.
DataSheet4U.
net/ Data and specifications subject to change without notice AP6902AGH-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Test Conditions VGS=0V, ID=250uA VGS=10V, ID=12A VGS=4.
5V, ID=8A Min.
30 1 - Typ.
26 15 2 9.
5 9 41 24 10 800 210 150 2.
4 Max.
Units 9.
2 13.
5 3 10 +100 24 1280 4.
8 V mΩ mΩ V S uA nA nC nC nC ns ns ns ns pF pF pF Ω VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time ...


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