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SI4136DY

Vishay
Part Number SI4136DY
Manufacturer Vishay
Description N-Channel MOSFET
Published Apr 18, 2013
Detailed Description New Product Si4136DY Vishay Siliconix N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) 0.002 at VGS...
Datasheet PDF File SI4136DY PDF File

SI4136DY
SI4136DY

Overview
New Product Si4136DY Vishay Siliconix N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) 0.
002 at VGS = 10 V 0.
0025 at VGS = 4.
5 V ID (A)a 46 41 Qg (Typ.
) 34 nC FEATURES • Halogen-free According to IEC 61249-2-21 • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested APPLICATIONS • OR-ing • DC/DC SO-8 D S S S G 1 2 3 4 Top View S Ordering Information: Si4136DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET 8 7 6 5 D D D D G ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted http://www.
DataSheet4U.
net/ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.
1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS IAS EAS PD TJ, Tstg Limit 20 ± 20 46 37 31b, c 24.
7b, c 70 7 3.
1b, c 30 45 7.
8 5 3.
5b, c 2.
2b, c - 55 to 150 Unit V Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Avalanche Energy A mJ Maximum Power Dissipation W Operating Junction and Storage Temperature Range °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot (Drain) t ≤ 10 s Steady State Symbol RthJA RthJF Typical 29 13 Maximum 35 16 Unit °C/W Notes: a.
Based on TC = 25 °C.
b.
Surface Mounted on 1" x 1" FR4 board.
c.
t = 10 s.
d.
Maximum under Steady State conditions is 80 °C/W.
Document Number: 64718 S09-0139-Rev.
A, 02-Feb-09 www.
vishay.
com 1 datasheet pdf - http://www.
DataSheet4U.
net/ New Product Si4136DY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Dynamic b Symbol VDS ΔVDS/TJ ΔVGS(th)/TJ VGS(th) IGSS IDSS ID(on) RDS(on) gfs Ciss Coss Crss Qg Qgs...


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