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MBR12035CT

Naina Semiconductor
Part Number MBR12035CT
Manufacturer Naina Semiconductor
Description (MBR12020CT - MBR12040CTR) Schottky Power Diode
Published May 18, 2013
Detailed Description Naina Semiconductor Ltd. Features • • • • Guard Ring Protection Low forward voltage drop High surge current capability U...
Datasheet PDF File MBR12035CT PDF File

MBR12035CT
MBR12035CT

Overview
Naina Semiconductor Ltd.
Features • • • • Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM MBR12020CT thru MBR12040CTR Silicon Schottky Diode, 120A TWIN TOWER PACKAGE Maximum Ratings (TJ = 25oC unless otherwise specified) Parameter Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Average forward current Non-repetitive forward surge current, half sinewave Symbol VRRM VRMS VDC IF(AV) TC ≤ 140 oC TC = 25 oC tp = 8.
3 ms Conditions MBR12020CT (R) 20 14 20 120 MBR12030CT MBR12035CT (R) (R) 30 21 30 120 35 25 35 120 MBR12040CT (R) 40 28 40 120 Units V V V A IFSM 800 http://www.
DataSheet4U.
net/ 800 800 800 A Electrical Characteristics (TJ = 25oC unless otherwise specified) Parameter DC forward voltage Symbol VF Conditions IF = 60 A TJ = 25 oC VR = 20 V TJ = 25 oC VR = 20 V TJ = 125oC MBR12020CT (R) 0.
68 3 200 MBR12030CT (R) 0.
68 3 200 MBR12035CT (R) 0.
68 3 200 MBR12040CT (R) 0.
68 3 mA 200 Units V DC reverse current ...


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