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MBR12080CT

Naina Semiconductor
Part Number MBR12080CT
Manufacturer Naina Semiconductor
Description (MBR12045CT - MBR120100CTR) Schottky Power Diode
Published May 18, 2013
Detailed Description Naina Semiconductor Ltd. Features • • • • Guard Ring Protection Low forward voltage drop High surge current capability U...
Datasheet PDF File MBR12080CT PDF File

MBR12080CT
MBR12080CT

Overview
Naina Semiconductor Ltd.
Features • • • • Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM MBR12045CT thru MBR120100CTR Silicon Schottky Diode, 120A TWIN TOWER PACKAGE Maximum Ratings (TJ = 25oC unless otherwise specified) Parameter Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Average forward current Non-repetitive forward surge current, half sinewave Symbol VRRM VRMS VDC IF(AV) TC ≤ 140 oC TC = 25 oC tp = 8.
3 ms Conditions MBR12045CT (R) 45 32 45 120 MBR12060CT MBR12080CT (R) (R) 60 42 60 120 80 56 80 120 MBR120100C T(R) 100 70 100 120 Units V V V A IFSM 800 http://www.
DataSheet4U.
net/ 800 800 800 A Electrical Characteristics (TJ = 25oC unless otherwise specified) Parameter DC forward voltage Symbol VF Conditions IF = 60 A TJ = 25 oC VR = 20 V TJ = 25 oC VR = 20 V TJ = 125oC MBR12045CT (R) 0.
68 3 200 MBR12060CT (R) 0.
75 3 200 MBR12080CT (R) 0.
86 3 200 MBR120100C T(R) 0.
86 3 mA 200 Units V DC reverse cur...


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