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MBR20080CT

Naina Semiconductor
Part Number MBR20080CT
Manufacturer Naina Semiconductor
Description (MBR20045CT - MBR200100CTR) Schottky Power Diode
Published May 18, 2013
Detailed Description Naina Semiconductor Ltd. Features • • • • Guard Ring Protection Low forward voltage drop High surge current capability U...
Datasheet PDF File MBR20080CT PDF File

MBR20080CT
MBR20080CT

Overview
Naina Semiconductor Ltd.
Features • • • • Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM MBR20045CT thru MBR200100CTR Silicon Schottky Diode, 200A TWIN TOWER PACKAGE Maximum Ratings (TJ = 25oC unless otherwise specified) Parameter Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Average forward current Non-repetitive forward surge current, half sinewave Symbol VRRM VRMS VDC IF(AV) TC ≤ 135 oC TC = 25 oC tp = 8.
3 ms Conditions MBR20045CT (R) 45 32 45 200 MBR20060CT MBR20080CT (R) (R) 60 42 60 200 80 56 80 200 MBR200100C T(R) 100 70 100 200 Units V V V A IFSM 1500 http://www.
DataSheet4U.
net/ 1500 1500 1500 A Electrical Characteristics (TJ = 25oC unless otherwise specified) Parameter DC forward voltage Symbol VF Conditions IF = 100 A TJ = 25 oC VR = 20 V TJ = 25 oC VR = 20 V TJ = 125oC MBR20045CT (R) 0.
68 5 200 MBR20060CT (R) 0.
76 5 200 MBR20080CT (R) 0.
88 5 200 MBR200100C T(R) 0.
88 5 mA 200 Units V DC revers...


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