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MBR30035CT

Naina Semiconductor
Part Number MBR30035CT
Manufacturer Naina Semiconductor
Description (MBR30020CT - MBR30040CTR) Schottky Power Diode
Published May 18, 2013
Detailed Description Naina Semiconductor Ltd. Features • • • • Guard Ring Protection Low forward voltage drop High surge current capability U...
Datasheet PDF File MBR30035CT PDF File

MBR30035CT
MBR30035CT

Overview
Naina Semiconductor Ltd.
Features • • • • Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM MBR30020CT thru MBR30040CTR Silicon Schottky Diode, 300A TWIN TOWER PACKAGE Maximum Ratings (TJ = 25oC unless otherwise specified) Parameter Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Average forward current Non-repetitive forward surge current, half sinewave Symbol VRRM VRMS VDC IF(AV) TC ≤ 140 oC TC = 25 oC tp = 8.
3 ms Conditions MBR30020CT (R) 20 14 20 300 MBR30030CT MBR30035CT (R) (R) 30 21 30 300 35 25 35 300 MBR30040CT (R) 40 28 40 300 Units V V V A IFSM 2500 http://www.
DataSheet4U.
net/ 2500 2500 2500 A Electrical Characteristics (TJ = 25oC unless otherwise specified) Parameter DC forward voltage Symbol VF Conditions IF = 150 A TJ = 25 oC VR = 20 V TJ = 25 oC VR = 20 V TJ = 125oC MBR30020CT (R) 0.
68 8 200 MBR30030CT (R) 0.
68 8 200 MBR30035CT (R) 0.
68 8 200 MBR30040CT (R) 0.
68 8 mA 200 Units V DC reverse cur...


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