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MBR30080CT

Naina Semiconductor
Part Number MBR30080CT
Manufacturer Naina Semiconductor
Description (MBR30045CT - MBR300100CTR) Schottky Power Diode
Published May 18, 2013
Detailed Description Naina Semiconductor Ltd. Features • • • • Guard Ring Protection Low forward voltage drop High surge current capability U...
Datasheet PDF File MBR30080CT PDF File

MBR30080CT
MBR30080CT

Overview
Naina Semiconductor Ltd.
Features • • • • Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM MBR30045CT thru MBR300100CTR Silicon Schottky Diode, 300A TWIN TOWER PACKAGE Maximum Ratings (TJ = 25oC unless otherwise specified) Parameter Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Average forward current Non-repetitive forward surge current, half sinewave Symbol VRRM VRMS VDC IF(AV) TC ≤ 140 oC TC = 25 oC tp = 8.
3 ms Conditions MBR30045CT (R) 45 32 45 300 MBR30060CT MBR30080CT (R) (R) 60 42 60 300 80 56 80 300 MBR300100C T(R) 100 70 100 300 Units V V V A IFSM 2500 http://www.
DataSheet4U.
net/ 2500 2500 2500 A Electrical Characteristics (TJ = 25oC unless otherwise specified) Parameter DC forward voltage Symbol VF Conditions IF = 150 A TJ = 25 oC VR = 20 V TJ = 25 oC VR = 20 V TJ = 125oC MBR30045CT (R) 0.
68 8 200 MBR30060CT (R) 0.
76 8 200 MBR30080CT (R) 0.
88 8 200 MBR300100C T(R) 0.
88 8 mA 200 Units V DC revers...


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