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2N6782LCC4

Seme LAB
Part Number 2N6782LCC4
Manufacturer Seme LAB
Description N-CHANNEL POWER MOSFET
Published Mar 22, 2005
Detailed Description 2N6782LCC4 MECHANICAL DATA Dimensions in mm (inches) N–CHANNEL POWER MOSFET ≈ 2.16 (0.085) 1.27 (0.050) 1.07 (0.040) ...
Datasheet PDF File 2N6782LCC4 PDF File

2N6782LCC4
2N6782LCC4

Overview
2N6782LCC4 MECHANICAL DATA Dimensions in mm (inches) N–CHANNEL POWER MOSFET ≈ 2.
16 (0.
085) 1.
27 (0.
050) 1.
07 (0.
040) 9.
14 (0.
360) 8.
64 (0.
340) 12 13 14 15 16 1.
39 (0.
055) 1.
02 (0.
040) 11 7.
62 (0.
300) 7.
12 (0.
280) 17 18 1 2 0.
76 (0.
030) 0.
51 (0.
020) 10 9 8 VDSS ID(cont) RDS(on) FEATURES 100V 3.
1A 0.
6W 7 6 5 4 3 1.
65 (0.
065) 1.
40 (0.
055) 0.
33 (0.
013) Rad.
0.
08 (0.
003) • SURFACE MOUNT • SMALL FOORPRINT • HERMETICALLY SEALED • DYNAMIC dv/dt RATING 1.
39 (0.
055) 1.
15 (0.
045) 0.
43 (0.
017) 0.
18 (0.
007 Rad.
LCC4 MOSFET GATE DRAIN SOURCE • AVALANCHE ENERGY RATING PINS 4,5 1,2,15,16,17,18 6,7,8,9,10,11,12,13 TRANSISTOR BASE COLLECTOR EMITTER • SIMPLE DRIVE REQUIREMENTS • LIGHTWEIGHT ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VGS ID ID IDM PD EAS dv/dt TJ , Tstg Gate – Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 Power Dissipation @ Tcase = 25°C Linear Derating Factor Single Pulse Avalanche Energy Peak Diode Recovery 3 Operating and Storage Temperature Range Surface Temperature ( for 5 sec).
Notes 1) Pulse Test: Pulse Width £ 300ms, d £ 2% 2) @ VDD = 50V , L ³ 570mH , RG = 25W , Peak IL = 14A , Starting TJ = 25°C 3) @ ISD £ 14A , di/dt £ 140A/ms , VDD £ BVDSS , TJ £ 150°C , Suggested RG = 7.
5W 2 ±20V (VGS = 10V , Tcase = 25°C) (VGS = 10V , Tcase = 100°C) 3.
1A 2.
0A 12A 11W 0.
09W/°C 68mJ 5.
5V/ns -55 to +150°C 300°C Semelab plc.
Telephone +44(0)1455 556565.
Fax +44(0)1455 552612.
E-mail: sales@semelab.
co.
uk Website: http://www.
semelab.
co.
uk 10/99 2N6782LCC4 ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter STATIC ELECTRICAL RATINGS BVDSS Drain – Source Breakdown Voltage DBVDSS Temperature Coefficient of DTJ Breakdown Voltage Static Drain – Source On–State RDS(on) Resistance 1 VGS(th) Gate Threshold Voltage gfs Forward Transconductance 1 IDSS IGSS IGSS Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf IS ISM VSD trr Qrr ton Zero Gate Voltage Drain Current Forward Gat...


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