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MBR60035CTR

Naina Semiconductor
Part Number MBR60035CTR
Manufacturer Naina Semiconductor
Description (MBR60020CT - MBR60040CTR) Schottky Power Diode
Published May 18, 2013
Detailed Description Naina Semiconductor Ltd. Features • • • • Guard Ring Protection Low forward voltage drop High surge current capability U...
Datasheet PDF File MBR60035CTR PDF File

MBR60035CTR
MBR60035CTR

Overview
Naina Semiconductor Ltd.
Features • • • • Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM MBR60020CT thru MBR60040CTR Silicon Schottky Diode, 600A TWIN TOWER PACKAGE Maximum Ratings (TJ = 25oC unless otherwise specified) Parameter Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Average forward current Non-repetitive forward surge current, half sinewave Symbol VRRM VRMS VDC IF(AV) TC ≤ 100 oC TC = 25 oC tp = 8.
3 ms Conditions MBR60020CT (R) 20 14 20 600 MBR60030CT MBR60035CT (R) (R) 30 21 30 600 35 25 35 600 MBR60040CT (R) 40 28 40 600 Units V V V A IFSM 4000 http://www.
DataSheet4U.
net/ 4000 4000 4000 A Electrical Characteristics (TJ = 25oC unless otherwise specified) Parameter DC forward voltage Symbol VF Conditions IF = 300 A TJ = 25 oC VR = 20 V TJ = 25 oC VR = 20 V TJ = 125oC MBR60020CT (R) 0.
75 1 20 MBR60030CT (R) 0.
75 1 20 MBR60035CT (R) 0.
75 1 20 MBR60040CT (R) 0.
75 1 mA 20 Units V DC reverse current...


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