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2N7000CSM

Seme LAB
Part Number 2N7000CSM
Manufacturer Seme LAB
Description N-channel MOSFET
Published Mar 22, 2005
Detailed Description 2N7000CSM MECHANICAL DATA Dimensions in mm (inches) N–CHANNEL ENHANCEMENT MODE MOS TRANSISTOR 0.31 rad. (0.012) 0.51 ...
Datasheet PDF File 2N7000CSM PDF File

2N7000CSM
2N7000CSM

Overview
2N7000CSM MECHANICAL DATA Dimensions in mm (inches) N–CHANNEL ENHANCEMENT MODE MOS TRANSISTOR 0.
31 rad.
(0.
012) 0.
51 ± 0.
10 (0.
02 ± 0.
004) 2.
54 ± 0.
13 (0.
10 ± 0.
005) 3 FEATURES 0.
76 ± 0.
15 (0.
03 ± 0.
006) 2 1 • V(BR)DSS = 60V • RDS(ON) = 5W A 1.
40 (0.
055) max.
1.
91 ± 0.
10 (0.
075 ± 0.
004) 3.
05 ± 0.
13 (0.
12 ± 0.
005) A= 0.
31 rad.
(0.
012) • ID = 200mA • Hermetic Ceramic Surface Mount package 1.
02 ± 0.
10 (0.
04 ± 0.
004) SOT23 CERAMIC (LCC1 PACKAGE) Underside View PAD 1 – Gate PAD 2 – Source PAD 3 – Drain • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TCASE = 25°C unless otherwise stated) VDS VGS ID IDM PD Tj Tstg Drain – Source Voltage Gate – Source Voltage Drain Current Pulsed Drain Current * Power Dissipation Storage Temperature Range @ TCASE = 25°C Operating Junction Temperature Range @ TCASE = 25°C 60V ±40V 200mA 500mA 300mW –55 to 150°C –55 to 150°C * Pulse width limited by maximum junction temperature.
Magnatec.
Telephone +44(0)1455 554711.
Fax +44(0)1455 558...


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