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NGTB25N120FLWG

ON Semiconductor
Part Number NGTB25N120FLWG
Manufacturer ON Semiconductor
Description IGBT
Published May 26, 2013
Detailed Description NGTB25N120FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench constructi...
Datasheet PDF File NGTB25N120FLWG PDF File

NGTB25N120FLWG
NGTB25N120FLWG

Overview
NGTB25N120FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.
The IGBT is well suited for UPS and solar applications.
Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage.
Low Saturation Voltage using Trench with Field Stop Technology Low Switching Loss Reduces System Power Dissipation 10 ms Short Circuit Capability Low Gate Charge Soft, Fast Free Wheeling Diode These are Pb−Free Devices http://onsemi.
com Features • • • • • • 25 A, 1200 V VCE...


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