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NGTB30N120IHSWG

ON Semiconductor
Part Number NGTB30N120IHSWG
Manufacturer ON Semiconductor
Description IGBT
Published May 26, 2013
Detailed Description NGTB30N120IHSWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) ...
Datasheet PDF File NGTB30N120IHSWG PDF File

NGTB30N120IHSWG
NGTB30N120IHSWG

Overview
NGTB30N120IHSWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss.
The IGBT is well suited for resonant or soft switching applications.
Incorporated into the device is a rugged co−packaged free wheeling diode with a low forward voltage.
Features http://onsemi.
com • • • • • Low Saturation Voltage using Trench with Field Stop Technology Low Switching Loss Reduces System Power Dissipation Optimized for Low Case Temperature in IH Cooker Application Low Gate Charge These are Pb−Free Devices 30 A, 1200 V VCEsat = 2.
00 V Eoff = 1.
0 mJ C Typical Applications • Inductive Heating • Consumer Appliances • Soft Switching ABSOLUTE MAXIMUM RATINGS Rating Collector−emitter voltage Collector current @ TC = 25°C @ TC = 100°C Pulsed collector current, Tpulse limited by TJmax Diode forward curre...


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