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IRG7PSH54K10DPbF

Part Number	IRG7PSH54K10DPbF
Manufacturer	International Rectifier
Description	Insulated Gate Bipolar Transistor
Published	Jun 14, 2013
Detailed Description	IRG7PSH54K10DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V IC = 65A, TC =100°...
Datasheet	IRG7PSH54K10DPbF PDF File

Overview

IRG7PSH54K10DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V IC = 65A, TC =100°C tSC 10µs, TJ(max) = 150°C VCE(ON) typ.
= 1.
9V @ IC = 50A G E C C G E Applications • Industrial Motor Drive • UPS • Solar Inverters • Welding n-channel G Gate C Collector IRG7PSH54K10DPbF E Emitter Features Low VCE(ON) and switching losses 10µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 150°C Positive VCE (ON) Temperature Coefficient Base part number IRG7PSH54K10DPbF Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 25°C IF @ TC = 100°C VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter ...

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IRG7PSH54K10DPbF Insulated Gate Bipolar Transistor - International Rectifier

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