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H9DA4GH4JJAMCR

Hynix
Part Number H9DA4GH4JJAMCR
Manufacturer Hynix
Description NAND 4Gb(x16) / mobile DDR 4Gb(x32 2CS)
Published Jun 27, 2013
Detailed Description MCP Specification 4Gb (256Mb x16) NAND Flash + 4Gb (64Mb x32 2/CS 2CKE) mobile DDR http://www.DataSheet4U.net/ This doc...
Datasheet PDF File H9DA4GH4JJAMCR PDF File

H9DA4GH4JJAMCR
H9DA4GH4JJAMCR

Overview
MCP Specification 4Gb (256Mb x16) NAND Flash + 4Gb (64Mb x32 2/CS 2CKE) mobile DDR http://www.
DataSheet4U.
net/ This document is a general product description and is subject to change without notice.
Hynix does not assume any responsibility for use of circuits described.
No patent licenses are implied.
Rev 1.
1 / Mar.
2011 1 datasheet pdf - http://www.
DataSheet4U.
net/ H9DA4GH4JJAMCR series NAND 4Gb(x16) / mobile DDR 4Gb(x32 2CS) Document Title MCP 4Gb (256Mb x16) NAND Flash / 4Gb (2*64Mb x32 2CS 2CKE) DDR Revision History Revision No.
0.
1 1.
0 1.
1 History Initial Draft - 4Gb NAND Flash D-Die - 4Gb mobile DDR (2 x 2Gb Mobile DDDR A-Die) First version Editorial Change Draft Date Oct.
2010 Nov.
2010 Mar.
2011 Remark Preliminary http://www.
DataSheet4U.
net/ Rev 1.
1 / Mar.
2010 2 datasheet pdf - http://www.
DataSheet4U.
net/ H9DA4GH4JJAMCR series NAND 4Gb(x16) / mobile DDR 4Gb(x32 2CS) FEATURES [ MCP ] ● Operation Temperature - -30oC ~ 85oC ● Packcage - 137-ball FBGA - 10.
5x13.
0mm2, 1.
2t, 0.
8mm pitch - Lead & Halogen Free [ NAND Flash ] ● Multiplane Architecture ● Supply Voltage - Vcc = 1.
7 - 1.
95 V ● Memory Cell Array - (1K + 32) words x 64 pages x 4096 blocks ● Page Size - (1K+ 32 spare) Words ● Block Size - (64K + 2K spare) Words ● Page Read / Program - Random access : 25us (max.
) - Sequential access : 45ns (min.
) - Page program time : 250us (typ.
) - Multi-page program time (2 pages) : 250us (typ.
) ● COPY BACK PROGRAM - Automatic block download without latency time ● FAST BLOCK ERASE - Block erase time: 3.
5ms (typ.
) - Multi-block erase time (2 blocks) : 3.
5ms (typ.
) ● CACHE READ - Internal (2048 + 64) Byte buffer to improve the read throughtput.
● STATUS REGISTER - Normal Status Register (Read/Program/Erase) - Extended Status Register (EDC) ● BLOCK PROTECTION - To Protect Block against Write/Erase ● HARDWARE DATA PROTECTION - Program/Erase locked during Power transitions.
● DATA RETENTION - 100,000 Program / Erase cycles (with 1bit /528Byte ECC) - 10 Year Data ...


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