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MRF8S7235NR3

Freescale Semiconductor
Part Number MRF8S7235NR3
Manufacturer Freescale Semiconductor
Description RF Power Field Effect Transistor
Published Jul 23, 2013
Detailed Description Freescale Semiconductor Technical Data Document Number: MRF8S7235N Rev. 0, 6/2012 RF Power Field Effect Transistor N-...
Datasheet PDF File MRF8S7235NR3 PDF File

MRF8S7235NR3
MRF8S7235NR3

Overview
Freescale Semiconductor Technical Data Document Number: MRF8S7235N Rev.
0, 6/2012 RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET Designed for base station applications with frequencies from 728 to 768 MHz.
Can be used in Class AB and Class C for all typical cellular base station modulation formats.
• Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 1400 mA, Pout = 63 Watts Avg.
, IQ Magnitude Clipping, Channel Bandwidth = 3.
84 MHz, Input Signal PAR = 7.
5 dB @ 0.
01% Probability on CCDF.
Frequency (MHz) 728 748 768 Gps (dB) 20.
0 20.
2 20.
1 ηD (%) 36.
1 36.
0 35.
9 Output PAR (dB) 6.
3 6.
4 6.
4 ACPR (dBc) --38.
1 --39.
0 --38.
7 MRF8S7235NR3 728-768 MHz, 63 W AVG.
, 28 V SINGLE W-CDMA LATERAL N-CHANNEL RF POWER MOSFET • Capable of Handling 10:1 VSWR, @ 32 Vdc, 748 MHz, 360 Watts CW Output Power (3 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness • Typical Pout @ 1 dB Compression Point ≃ 260 Watts CW Features • 100% PAR Tested...


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