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VB20100C

Vishay
Part Number VB20100C
Manufacturer Vishay
Description Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Published Aug 6, 2013
Detailed Description www.vishay.com V20100C, VF20100C, VB20100C, VI20100C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier...
Datasheet PDF File VB20100C PDF File

VB20100C
VB20100C


Overview
www.
vishay.
com V20100C, VF20100C, VB20100C, VI20100C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.
50 V at IF = 5 A TO-220AB TMBS ® ITO-220AB V20100C 3 2 1 PIN 1 PIN 2 PIN 3 CASE TO-263AB K VF20100C 123 PIN 1 PIN 2 PIN 3 TO-262AA K FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, and TO-262AA package) • Material categorization: For definitions of compliance please see www.
vishay.
com/doc?99912 TYPICAL APPLICATIONS For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse battery protection.
2 1 VB20100C PIN 1 K PIN 2 HEATSINK VI20100C PIN 1 3 2 1 PIN 2 PIN 3 K PRIMARY CHARACTERISTICS Package TO-220AB, ITO-220AB, TO-263AB, TO-262AA IF(AV) VRRM IFSM VF at IF = 10 A TJ max.
Diode variation 2 x 10 A 100 V 150 A 0.
58 V 150 °C Common cathode MECHANICAL DATA Case: TO-220AB, ITO-220AB, TO-263AB and TO-262AA Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum       MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig.
1) per device per diode VRRM IF(AV) Peak forward surge current 8.
3 ms single half sine-wave superimposed on rated load per diode IFSM Non-repetitive avalanche energy at TJ = 25 °C, L = 60 mH per diode Peak repetitive reverse current at tp = 2 μs, 1 kHz, TJ = 38 °C ± 2 °C per diode Voltage rate of change (rated VR) Isolatio...


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